Negative capacitance field effect transistors based on van der Waals 2D materials
RS Chen, Y Lu - Small, 2024 - Wiley Online Library
Steep subthreshold swing (SS) is a decisive index for low energy consumption devices.
However, the SS of conventional field effect transistors (FETs) has suffered from Boltzmann …
However, the SS of conventional field effect transistors (FETs) has suffered from Boltzmann …
Silicon Wearable Body Area Antenna for Speech‐Enhanced IoT and Nanomedical Applications
We propose in this paper a reduction in the size of wearable antennas on silicon (Si) for
medicinal frameworks and Internet of things (IoT) in various nanoapplications. This research …
medicinal frameworks and Internet of things (IoT) in various nanoapplications. This research …
A novel digital logic for bit reversal and address generations in FFT computations
K Elango, K Muniandi - Wireless Personal Communications, 2023 - Springer
Abstract The Fast Fourier Transform and Inverse Fast Fourier Transform are high efficient
algorithm that have wide a range of Digital Signal Processing (DSP) and telecommunication …
algorithm that have wide a range of Digital Signal Processing (DSP) and telecommunication …
Impact of temperature on a ferroelectric interfaced negative capacitance double gate junctionless accumulation mode field effect transistor-compact model
Ferroelectric interfaced negative capacitance field effect transistors are gaining popularity for
low power applications; however, as temperature is a constant influencing factor, further …
low power applications; however, as temperature is a constant influencing factor, further …
EVMFFR: Electronic Voting Machine with Fingerprint and Facial Recognition
R Thirumal, BR Rahul, B Rahulpriyesh… - … Conference on Next …, 2022 - ieeexplore.ieee.org
An Internet of Things (IoT) based Electronic Voting Machine with Fingerprint and Facial
Recognition (EVMFFR) with duplicate voting avoidance is proposed, designed and …
Recognition (EVMFFR) with duplicate voting avoidance is proposed, designed and …
TMD material investigation for a low hysteresis vdW NCFET logic transistor
Boltzmann limit is inevitable in conventional MOSFETs, which prevent them to be used for
low-power applications. Research in device physics can address this problem by selection …
low-power applications. Research in device physics can address this problem by selection …
Hardware implementation of approximate multipliers for signal processing applications
Multiplication is a complex and substantial arithmetic task involved in signal processing
applications. The hardware complexity of the multiplier is always high when compared with …
applications. The hardware complexity of the multiplier is always high when compared with …
[PDF][PDF] Optimization of 14nm Horizontal Double Gate for Optimum Threshold Voltage Using L9 Taguchi Method.
Silvaco ATHENA TCAD tools are used to model and simulate the electrical properties and
characterization of the suggested layout of a 14 nm gate length (Lg) Double Gate Bilayer …
characterization of the suggested layout of a 14 nm gate length (Lg) Double Gate Bilayer …
Design Of Dual Band Body Area Network Antenna Using CST
R Harika, MA Raj, SK Anirudh… - 2023 International …, 2023 - ieeexplore.ieee.org
In this paper a wearable antenna is proposed for WBAN frequency range. The antenna is a
dual band button with a diameter 14.52 mm integrating a patch on top of a dielectric section …
dual band button with a diameter 14.52 mm integrating a patch on top of a dielectric section …
[PDF][PDF] Research Article Silicon Wearable Body Area Antenna for Speech-Enhanced IoT and Nanomedical Applications
We propose in this paper a reduction in the size of wearable antennas on silicon (Si) for
medicinal frameworks and Internet of things (IoT) in various nanoapplications. This research …
medicinal frameworks and Internet of things (IoT) in various nanoapplications. This research …