Abnormal Stranski–Krastanov mode growth of green InGaN quantum dots: morphology, optical properties, and applications in light-emitting devices
Stranski–Krastanov (SK) growth mode is widely adopted for the self-assembled growth of
semiconductor quantum dots (QDs), wherein a relatively large critical thickness is essential …
semiconductor quantum dots (QDs), wherein a relatively large critical thickness is essential …
Tunable Enhanced Second‐Harmonic Generation in InP‐InAsP Quantum Well Nanomembranes
Second‐harmonic generation (SHG) offers a convenient approach for infrared‐to‐visible
light conversion in tunable nanoscale light sources and optical communication …
light conversion in tunable nanoscale light sources and optical communication …
Carrier recombination dynamics in green InGaN-LEDs with quantum-dot-like structures
M Tian, C Ma, T Lin, J Liu, DN Talwar, H Yang… - Journal of Materials …, 2021 - Springer
Exciton localization phenomena are considered here to comprehend the high internal
quantum efficiency in InGaN/GaN multiple-quantum-well structures having discrete quantum …
quantum efficiency in InGaN/GaN multiple-quantum-well structures having discrete quantum …
Analytic study of electrical, thermal and thermoelectric properties of ultra-thin nanowires
The do** density, temperature, wire thickness, indium content, and surface roughness
effects on electronic, thermal, and thermoelectric transport coefficients of ultra-thin …
effects on electronic, thermal, and thermoelectric transport coefficients of ultra-thin …