To a large extent, scaling was not seriously challenged in the past. However, a closer look
reveals that early signs of scaling limits were seen in high-performance devices in recent …

Although silicon-based CMOS devices have dominated the integrated circuit applications
over the past few decades, it is expected that the development of CMOS would reach its …

The downsizing of CMOS devices has been accelerated very aggressively in both
production and research in recent years. Sub-100 nm gate length CMOS large-scale …

The authors present a study on the layout dependence of the silicon-germanium
source/drain (Si 1-x Ge x S/D) technology. Experimental results on Si 1-x Ge x S/D …

US8105908B2 - Methods for forming a transistor and modulating channel stress - Google
Patents US8105908B2 - Methods for forming a transistor and modulating channel stress …

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5,963,817 A 10, 1999 Chu et al. 6,228,694 B1 5/2001 Doyle et al. 6,242,324 B1 6, 2001 Kub …

Division of application No. 1 1/497,632, filed on Aug.(57) 2, 2006, now Pat. No.
7,485,544.(51) Int. Cl. In various method embodiments, a device region is defined in HOIL …

The effects of 63 MeV proton irradiation on 90 nm strained silicon CMOS on insulator is
examined for the first time. The devices show no observable degradation in DC performance …

In this letter, we investigate the impact of a hybridized strain technology on the performance
of FinFET-based multigate field-effect transistors (MUGFETs). The technology combines the …

6,593,625 B2 7/2003 Christiansen et al. 6,603,156 B2 8, 2003 Rim 6,630,713 B2 10/2003
Geusic 6,649,492 B2 11/2003 Chu et al. 6,689,671 B1 2/2004 Yu et al. 6,703,648 B1 3/2004 …