A unified picture of different application areas for incipient metals is presented. This
unconventional material class includes several main‐group chalcogenides, such as GeTe …

Ge-Sb-Te (GST)-based phase-change memory (PCM) excels in the switching performance
but remains insufficient of the operating speed to replace cache memory (the fastest memory …

Atomic layer deposition (ALD) of Sb2Te3/GeTe superlattice (SL) film on planar and vertical
sidewall areas containing TiN metal and SiO2 insulator is demonstrated. The peculiar …

Resistance drift is one of the key challenges in phase‐change memory, especially in
multilevel storage applications. Although many efforts have been proposed to reduce the …

Interfacial phase change memory utilizing chalcogenide-based superlattices (CSLs) offers
outstanding device performance and is an emerging contender to replace conventional …

Photodetectors play a pivotal role in modern technology, particularly in applications
requiring precise light detection and imaging. Traditional photodetectors, however, are often …

Chalcogenide-based thin films are employed in data storage and memory technology
whereas van der Waals-bonded layered chalcogenide heterostructures are considered to …

This paper summarizes recent progress on thin film growth of chalcogenides by sputtering.
The materials discussed include Sb–Te, Bi–Te, Ge–Te, and their superlattices, materials that …

Abstract Ge-Sb-Te (GST) thin films are emerging materials for various non-volatile memory
applications. The compounds contain a huge number of vacancies that play important roles …

Abstract We have fabricated Sb 70 Se 30/HfO 2 superlattice-like structure thin films for phase
change memory by magnetron sputtering method, and investigated the effect of the HfO 2 …