The performance of a lithium-ion battery (LIB) is largely contingent upon its anode material.
At present, germanium-based anode materials are of interest due to their high theoretical …

We demonstrate the design, fabrication, and measurement of a switchable distributed Bragg
reflector (DBR) that can be thermally switched from a close-to-zero reflective OFF state to a …

In this paper, a low temperature deposition of germanium (Ge) films on silicon (Si) is
performed using Radio Frequency Plasma Enhanced Chemical Vapor Deposition (RF …

We examine the effect of a top nanofilm of 3 nm silicon nanoparticles (Si-NPs) on the
spectral features of the reflectivity of germanium (Ge). We use a 450 nm Ge layer grown by …

Ultrathin (20 nm) epitaxial films of germanium are deposited on crystalline silicon wafers, to
act as virtual substrates for the growth of III-V materials, opening a low-cost approach to …

Heteroepitaxial growth of Ge films on Si is necessary for the progress of integrated Si
photonics technology. In this work, an in-house assembled plasma enhanced chemical …

SiGeSn is a promising group IV material to develop the field of silicon photonics. Increasing
the tin concentration in the alloy is desired in order to achieve a direct bandgap in the …

The morphological evolution of Ge layers growing on the SiO 2/Si (100) substrate by photo-
excited chemical vapor deposition was traced through an analysis of pseudodielectric …

Monolithic three-dimensional (M3D) integration, it has been proposed, can overcome the
limitations of further circuits' performance improvement and functionality expansion. The …

SiGeSn is a promising group IV semiconducting alloy to advance the field of silicon
photonics. The bandgap of the alloy can be tuned by varying its' Si and Sn concentrations for …