The use of organic, oxide and low-dimensional materials in field-effect transistors has now
been studied for decades. However, properly reporting and comparing device performance …

Abstract Two-dimensional (2D) semiconducting transition metal dichalcogenides could be
used to build high-performance flexible electronics. However, flexible field-effect transistors …

Tungsten transition metal dichalcogenides (W-TMDs) are intriguing due to their properties
and potential for application in next-generation electronic devices. However, strong Fermi …

The high contact resistance of transition metal dichalcogenide (TMD)-based devices is
receiving considerable attention due to its limitation on electronic performance. The …

Atomically thin layered materials such as MoS 2 have future versatile applications in low
power electronics. Here, we demonstrate the growth of a salt-assisted large scale, high …

We have demonstrated atomic-scale defect characterization in scanning tunneling
microscopy images of single crystal tungsten diselenide using an ensemble of U-Net-like …

Over the past decades, the continued scaling of transistors has reduced the energy
consumption for every switching event and has increased the computational power of …

Molybdenum disulfide (MoS 2) is one of several transition metal dichalcogenides consisting
of a layer of transition atoms sandwiched between layers of chalcogens.[l] Interest in MoS 2 …