Quantum rings patterned from two-dimensional semiconductor heterostructures exhibit a
wealth of quantum transport phenomena at low temperature and in a magnetic field that can …

In this article, recent developments in the lattice‐mismatched epitaxy of InAs on (111) A‐
oriented substrates and related research topics, in which the presence or absence of the …

Droplet epitaxy was proposed to fabricate quantum dots in the early 1990s. Even though
many research efforts have been devoted to droplet epitaxy since then, it is only until …

Normal incident photodetection at mid infrared spectral region is achieved using the
intersublevel transitions from strain-free GaAs quantum dot pairs in Al0. 3Ga0. 7As matrix …

The electronic states in GaAs-Al x Ga1− x As elliptically-shaped quantum rings are
theoretically investigated through the numerical solution of the effective mass band equation …

We realized ultra-narrow excitonic emission from single GaAs/AlGaAs quantum dots (QDs)
grown by a refined droplet epitaxy technique. We found that uncapped quantum dots can be …

Traditional pin junction solar cells imbedded with quantum dots are attractive to achieve
chromatic light absorption enhancement. In this paper, multi-layer stacked GaAs and In 0.1 …

The fabrication, by pure self-assembly, of GaAs/AlGaAs dot–ring quantum nanostructures is
presented. The growth is performed via droplet epitaxy, which allows for the fine control …

Droplet epitaxy is a flexible nanomaterial growth technique and is a potential method to
fabricate advanced electronic and optoelectronic devices. Here, we report strain-free …

The effects of the magnetic field and impurity position on the electronic states and nonlinear
light absorption in a GaAs pyramidal quantum dot are investigated. The calculations were …