[HTML][HTML] Construction of C/SiC–Cu3Si–Cu interpenetrating composites for long-duration thermal protection at 2500 C by cooperative active-passive cooling

Y Wu, R Zhao, B Liang, S Pang, C Hu, J Li… - Composites Part B …, 2023 - Elsevier
Develo** materials which can resist long-term ablation at ultra-high temperatures above
2200° C in oxygen-containing environments is of prime importance for the thermal protection …

Investigation of carbon/copper multilayer to examine the influence of copper coating on the Li-storage performance of carbon

E Hüger, C **, K Meyer, D Uxa, F Yang - Energies, 2023 - mdpi.com
Thin copper and carbon coatings of electrodes of lithium-ion batteries (LIBs) have the
potential to improve LIB operation by preserving electrode integrity during cycling, by …

Mass spectrometric methods for the direct elemental and isotopic analysis of solid materials

AA Ganeev, AR Gubal, SV Potapov… - Russian Chemical …, 2016 - iopscience.iop.org
Recently, there has been rapid progress in methods for the direct mass spectrometric
analysis of solid materials, which do not require the sample preparation procedure including …

The growing process of defects at the interface between Au/Cu film and Si substrate driven by electron wind force

K Yan, J Guo, Y Wu, X Li, M Zhuang, L Yang… - Journal of Alloys and …, 2025 - Elsevier
Au/Cu multilayer films coated on silicon substrates with a native SiO 2 layer were prepared
using the magnetron sputtering system. The defects formation as well as their growing …

On the influence of the stacking sequence in the nucleation of Cu3Si: Experiment and the testing of nucleation models

M Ibrahim, Z Balogh, P Stender, R Schlesiger… - Acta materialia, 2014 - Elsevier
The nucleation of the Cu 3 Si phase was studied on sputter-deposited Cu/Si/Cu trilayered
specimens both in curved and planar geometry. Two experimental methods, atom probe …

[HTML][HTML] Grain boundary diffusion of Si in polycrystalline copper film

E Bodnár, V Takáts, T Fodor, J Hakl, Y Kaganovskii… - Vacuum, 2022 - Elsevier
Grain boundary (GB) diffusion of Si in polycrystalline Cu film was studied in the temperature
range of 403–453 K, in the C-type kinetic regime. The amorphous Si layer (80 nm) and …

Interface Engineering via Metal-coating of Silicon Nanostructured Thin Films for Reducing Anode Pulverization

P Kale, SP Muduli, RC Muduli, G Vecsei… - … on Electrical and …, 2024 - Springer
Si is a promising anode material for Li-ion batteries due to its high specific capacity
compared to conventional graphite and metal oxides; however, the pulverization during the …

The transition from linear to-parabolic growth of Cu3Si phase in Cu/a-Si system

B Parditka, H Zaka, G Erdélyi, GA Langer, M Ibrahim… - Scripta Materialia, 2018 - Elsevier
The solid state reaction between Cu and a-Si films was investigated at 150–200° C by depth
profiling with secondary neutral mass spectrometry. Intermixing was observed leading to the …

Effect of growth conditions on interface stability and thermophysical properties of sputtered Cu films on Si with and without WTi barrier layers

I Souli, VL Terziyska, J Keckes, W Robl… - Journal of Vacuum …, 2017 - pubs.aip.org
Direct current magnetron sputter deposited Cu films have been grown on Si substrates
without and with WTi barrier layers. The combined impact of thermal and kinetic energy …

Linear-parabolic transition in reactive diffusion–A concept of kinetic modelling

JJ Tomán, G Schmitz, Z Erdélyi - Computational Materials Science, 2017 - Elsevier
In Erdélyi and Schmitz (2012) a flexible concept for the computational description of the
phase formation and growth in solid state reactions was described. Unlike in other …