Failure modes and mechanisms of AlGaN/GaN high-electron-mobility transistors are
reviewed. Data from three de-accelerated tests are presented, which demonstrate a close …

Trap** is one of the most deleterious effects that limit performance and reliability in GaN
HEMTs. In this paper, we present a methodology to study trap** characteristics in GaN …

This review is concerned with the characterization and identification of the deep centres that
cause current collapse in nitride-based field effect transistors. Photoionization spectroscopy …

Effects of device processing on chemical and electronic properties of AlGaN surfaces were
investigated. The X-ray photoelectron spectroscopy analysis showed serious deterioration …

In this paper, a simple and reliable method to estimate the channel temperature of GaN high-
electron mobility transistors (HEMTs) is proposed. The technique is based on electrical …

A passivation method has been developed which reduces the degradation of AlGaN-GaN
high electron mobility transistor (HEMT) electrical properties caused by extended dc bias or …

Reduction of thermal resistance in AlGaN/GaN heterojunction field-effect transistors (HFETs)
is critical for further increase in their output power to be handled in these promising material …

Current collapse in GaN high-electron mobility transistors (HEMTs) is a temporary reduction
of drain–current immediately after the application of high voltage. Current collapse limits the …

This paper proposes a novel electrical method for the determination of channel temperature
in AlGaN/GaN high-electron mobility transistors. A test structure combining various device …

One of the most deleterious effects of electrical degradation of GaN HEMTs is an increase in
carrier trap** and subsequent current collapse. In this work, we have investigated the …