The application of pulsed lasers to the study of Single-Event Effects (SEEs) in integrated
circuits and devices is described. The role of a pulsed laser is to provide spatial and …

In this article, the performance and triggering mechanism of the single-event burnout (SEB)
of a 4H-SiC trench-gate (TG) MOSFET structure are evaluated by the 2-D numerical …

By scanning the charge-deposition profile produced by a pulsed laser throughout a device,
the spatially dependent charge-collection efficiency (CCE) can be determined. This is …

This paper investigates the single-event burnout (SEB) simulation results for both the
standard and hardened structure of power U-shape gate MOSFETs (UMOSFETs). The …

This paper is dedicated to the investigation of single-event effects (SEEs) in different types of
silicon Schottky diodes using heavy ions and laser pulses. The objectives are both to …

In atmospheric environment, neutron-induced single event effects are known to be a
concern for electronic devices reliability. The effect of atmospheric radiation on integrated …

Imaging the Single Event Burnout sensitive volume of vertical power MOSFETs using the laser
Two-Photon Absorption technique Page 1 Abstract—The Single Event Burnout sensitive …

Investigation on the Single Event Burnout Sensitive Volume Using Two-Photon Absorption
Laser Testing Page 1 This article has been accepted for inclusion in a future issue of this …

This paper presents a single event burnout (SEB) sensitivity characterization for power
MOSFETs, independent from tests, through a prediction model issued from TCAD analysis …

The natural radiation environment has proved to be particularly harsh on power electronics
devices. It is characterized by electrically charged particles such as heavy ions and protons …