Recent advances in SnSe nanostructures beyond thermoelectricity
Layered SnSe is an emerging class of black phosphorus, which is non‐toxic, eco‐friendly,
and chemically stable. Recently, SnSe nanostructures have triggered more research interest …
and chemically stable. Recently, SnSe nanostructures have triggered more research interest …
Ultralocalized optoelectronic properties of nanobubbles in 2D semiconductors
The optical properties of transition-metal dichalcogenides have previously been modified at
the nanoscale by using mechanical and electrical nanostructuring. However, a clear …
the nanoscale by using mechanical and electrical nanostructuring. However, a clear …
Origin of semiconductor and half‐metallic behaviors in the perovskite materials RbXF3 (X = Co, Mn, Fe or V): A GGA + U approach
In this paper, we study and discuss the structural, and electronic properties of the RbXF3 (X=
Co, Mn, V or Fe) Perovskite Materials using the Density Functional Theory (DFT). Also, the …
Co, Mn, V or Fe) Perovskite Materials using the Density Functional Theory (DFT). Also, the …
High performance piezotronic thermoelectric devices based on zigzag MoS2 nanoribbon
D Tang, M Dan, Y Zhang - Nano Energy, 2022 - Elsevier
Piezotronic and piezophototronic devices have high performance due to the coupling of
piezoelectric and semiconductor properties. Strain-induced polarization can effectively …
piezoelectric and semiconductor properties. Strain-induced polarization can effectively …
Strain-Control Magnetic Anisotropy of Antiferromagnetism in Two-Dimensional MXene V2C(OH)2
C Zhao, S Yan, S Gao, W Qiao, R Bai… - The Journal of Physical …, 2024 - ACS Publications
Using antiferromagnetic order states to store information is desirable due to the high rate of
data writing, large density of storage, and high anti-interference capability. Tuning magnetic …
data writing, large density of storage, and high anti-interference capability. Tuning magnetic …
High performance quantum piezotronic tunneling transistor based on edge states of MoS2 nanoribbon
High performance edge states-based quantum piezotronic tunneling transistor with MoS 2
nanoribbon device architecture at room temperature is demonstrated. The edge states are …
nanoribbon device architecture at room temperature is demonstrated. The edge states are …
Magnetic and Electronic Properties of van der Waals Heterostructures from Combined First-Principles and Schrödinger-Poisson Simulations
Y Zhu, D Zhang, H Ye, D Bai, M Li, GP Zhang… - Physical Review …, 2022 - APS
Nonmagnetic nitride-based van der Waals magnetic heterostructures, introducing
magnetism by constructing heterostructures with a two-dimensional room-temperature …
magnetism by constructing heterostructures with a two-dimensional room-temperature …
Piezo-phototronic intersubband terahertz devices based on layer-dependent van der Waals quantum well
Piezo-phototronic effect on intersubband transition of valence band is studied by the hybrid
kp theory tight-binding model approach. Piezoelectric properties of multilayer MoS 2 show …
kp theory tight-binding model approach. Piezoelectric properties of multilayer MoS 2 show …
[HTML][HTML] Polarization-induced giant thermoelectric effect in monolayer MoS2
The authors investigate the influence of local polarization on the thermoelectric properties of
monolayer MoS 2 using a tight-binding approach. It is found that strain-induced polarization …
monolayer MoS 2 using a tight-binding approach. It is found that strain-induced polarization …
Polarization-driven edge-state transport in transition-metal dichalcogenides
Intrinsic polarization has been demonstrated in layered structures to reduce the energy gap.
Here we demonstrate that strain-induced polarization can increase the energy gap and …
Here we demonstrate that strain-induced polarization can increase the energy gap and …