Transistor engineering based on 2D materials in the post-silicon era
The miniaturization of metal–oxide–semiconductor field-effect transistors (MOSFETs) has
been the driving force behind the development of integrated circuits over the past 60 years; …
been the driving force behind the development of integrated circuits over the past 60 years; …
Impacts of the shell do** profile on the electrical characteristics of junctionless FETs
MPV Kumar, CY Hu, KH Kao, YJ Lee… - IEEE Transactions on …, 2015 - ieeexplore.ieee.org
This paper presents the impacts of an advanced shell do** profile (SDP) on the electrical
characteristics of a junctionless (JL) FET in terms of OFF-current, subthreshold swing (SS) …
characteristics of a junctionless (JL) FET in terms of OFF-current, subthreshold swing (SS) …
Low temperature defect passivation technology for semiconductor electronic devices—Supercritical fluids treatment process
Currently, defects existing in materials and at the interface are the main bottlenecks limiting
the manufacture of high-performance electron devices, especially semiconductor devices …
the manufacture of high-performance electron devices, especially semiconductor devices …
1T-DRAM with shell-doped architecture
This paper reports on the usefulness of shell-doped (SD) junctionless (JL) transistor
architecture for operation as capacitorless dynamic random-access memory (1T-DRAM). SD …
architecture for operation as capacitorless dynamic random-access memory (1T-DRAM). SD …
Impact of channel do** engineering on the high-frequency noise performance of junctionless In0. 3Ga0. 7As/GaAs FET: a numerical simulation study
In this paper, the channel do** engineering is proposed to improve the benchmarking
parameters of the analog/radio frequency and the high frequency noise performance of the …
parameters of the analog/radio frequency and the high frequency noise performance of the …