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Transistor engineering based on 2D materials in the post-silicon era
The miniaturization of metal–oxide–semiconductor field-effect transistors (MOSFETs) has
been the driving force behind the development of integrated circuits over the past 60 years; …
been the driving force behind the development of integrated circuits over the past 60 years; …
[HTML][HTML] Process of Au-free source/drain ohmic contact to AlGaN/GaN HEMT
LQ Zhang, XL Wu, WQ Miao, ZY Wu, Q ** profile on the electrical characteristics of junctionless FETs
MPV Kumar, CY Hu, KH Kao, YJ Lee… - IEEE Transactions on …, 2015 - ieeexplore.ieee.org
This paper presents the impacts of an advanced shell do** profile (SDP) on the electrical
characteristics of a junctionless (JL) FET in terms of OFF-current, subthreshold swing (SS) …
characteristics of a junctionless (JL) FET in terms of OFF-current, subthreshold swing (SS) …
Enhance the Electrical and Photoelectrical Performance of MoS Transistor With Polyimide Gate Dielectric by Microwave Annealing
Y Zhang, X Su, S Cui, H Yang… - IEEE Transactions on …, 2024 - ieeexplore.ieee.org
Through a low-cost approach, molybdenum disulfide (MoS2) transistors with polyimide (PI)
dielectric layer that is more compatible with flexible electronics have been prepared, and …
dielectric layer that is more compatible with flexible electronics have been prepared, and …
Low temperature defect passivation technology for semiconductor electronic devices—Supercritical fluids treatment process
Currently, defects existing in materials and at the interface are the main bottlenecks limiting
the manufacture of high-performance electron devices, especially semiconductor devices …
the manufacture of high-performance electron devices, especially semiconductor devices …
Low energy ion-solid interactions: A quantitative experimental verification of binary collision approximation simulations
H Hofsäss, F Junge, P Kirscht… - Materials Research …, 2023 - iopscience.iop.org
Ultra-low energy ion implantation has become an attractive method for do** of two-
dimensional materials and ultra-thin films. The new dynamic Monte Carlo program …
dimensional materials and ultra-thin films. The new dynamic Monte Carlo program …
1T-DRAM with shell-doped architecture
This paper reports on the usefulness of shell-doped (SD) junctionless (JL) transistor
architecture for operation as capacitorless dynamic random-access memory (1T-DRAM). SD …
architecture for operation as capacitorless dynamic random-access memory (1T-DRAM). SD …