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Advances in pixel driving technology for micro-LED displays
H Gao, M Zou, C Zhong, J Zhuang, J Lin, Z Lu, Z Jiang… - Nanoscale, 2023 - pubs.rsc.org
Micro-LED displays have been recognized as the next-generation display technology. This
review focuses on the pixel-driving technology of micro-LED displays. The performance of …
review focuses on the pixel-driving technology of micro-LED displays. The performance of …
Multilevel ferroelectric domain wall memory for neuromorphic computing
B Shen, H Sun, X Hu, J Sun, J Jiang… - Advanced Functional …, 2024 - Wiley Online Library
Low‐power and parallel processing Neuromorphic computing that imitates on the human
brain's extraordinary data processing and learning capabilities is promising in non‐von …
brain's extraordinary data processing and learning capabilities is promising in non‐von …
[HTML][HTML] Ferroelectric devices for intelligent computing
Recently, transistor scaling is approaching its physical limit, hindering the further
development of the computing capability. In the post-Moore era, emerging logic and storage …
development of the computing capability. In the post-Moore era, emerging logic and storage …
Quasi-nondestructive read out of ferroelectric capacitor polarization by exploiting a 2TnC cell to relax the endurance requirement
Y ** Technique to Reduce Data Retrieval Cost in the Storage Consisting of Multi Memories
HS Lee - Journal of Internet of Things and Convergence, 2023 - koreascience.kr
Recently, with the recent rapid development of memory technology, various types of memory
are developed and are used to improve processing speed in data management systems. In …
are developed and are used to improve processing speed in data management systems. In …
Back-End-of-Line Compatible 2T1C Memory Cell With InGaZnO Thin-Film Transistors and Hf0.5Zr0.5O2-Based Ferroelectric Capacitors
Y Sun, S Zhang, Q Liu, Y Li, H Lu… - … on Electron Devices, 2025 - ieeexplore.ieee.org
Back-end-of-line (BEOL) compatible and high-performance thin-film transistors (TFTs) and
emer-ging memory devices trigger significant interest in their integration into 3-D computing …
emer-ging memory devices trigger significant interest in their integration into 3-D computing …
DEVICE-CIRCUIT CO-DESIGN OF MULTI-DOMAIN HZO-BASED FERROELECTRIC METAL FIELD EFFECT TRANSISTORS
LV Fernandes - 2023 - hammer.purdue.edu
Since the discovery of ferroelectricity in CMOS-compatible Hafnium dioxide, ferroelectric-
based non-volatile memories have been explored extensively as a next-generation memory …
based non-volatile memories have been explored extensively as a next-generation memory …