Synthesis and applications of III–V nanowires
E Barrigón, M Heurlin, Z Bi, B Monemar… - Chemical …, 2019 - ACS Publications
Low-dimensional semiconductor materials structures, where nanowires are needle-like one-
dimensional examples, have developed into one of the most intensely studied fields of …
dimensional examples, have developed into one of the most intensely studied fields of …
A review on III–V compound semiconductor short wave infrared avalanche photodiodes
Y Liang, CP Veeramalai, G Lin, X Su, X Zhang… - …, 2022 - iopscience.iop.org
The on-chip avalanche photodiodes (APDs) are crucial component of a fully integrated
photonics system. Specifically, III–V compound APD has become one of the main …
photonics system. Specifically, III–V compound APD has become one of the main …
Tapered InP nanowire arrays for efficient broadband high-speed single-photon detection
Superconducting nanowire single-photon detectors with peak efficiencies above 90% and
unrivalled timing jitter (< 30 ps) have emerged as a potent technology for quantum …
unrivalled timing jitter (< 30 ps) have emerged as a potent technology for quantum …
Extremely low excess noise and high sensitivity AlAs0.56Sb0.44 avalanche photodiodes
Fast, sensitive avalanche photodiodes (APDs) are required for applications such as high-
speed data communications and light detection and ranging (LIDAR) systems …
speed data communications and light detection and ranging (LIDAR) systems …
InGaAs–GaAs nanowire avalanche photodiodes toward single-photon detection in free-running mode
Single-photon detection at near-infrared (NIR) wavelengths is critical for light detection and
ranging (LiDAR) systems used in imaging technologies such as autonomous vehicle …
ranging (LiDAR) systems used in imaging technologies such as autonomous vehicle …
GaAs/GaAsSb Core–Shell Configured Nanowire-Based Avalanche Photodiodes up to 1.3 μm Light Detection
We report the first study on a GaAs/GaAsSb core–shell (CS)-configured nanowire (NW)-
based separate absorption, charge control, and multiplication region avalanche photodiode …
based separate absorption, charge control, and multiplication region avalanche photodiode …
A new paradigm in high-speed and high-efficiency silicon photodiodes for communication—Part I: Enhancing photon–material interactions via low-dimensional …
Photodetectors (PDs) used in communication systems require ultrafast response, high
efficiency, and low noise. PDs with such characteristics are increasingly in demand for data …
efficiency, and low noise. PDs with such characteristics are increasingly in demand for data …
InP/InAsP nanowire-based spatially separate absorption and multiplication avalanche photodetectors
Avalanche photodetectors (APDs) are key components in optical communication systems
due to their increased photocurrent gain and short response time as compared to …
due to their increased photocurrent gain and short response time as compared to …
Ensemble GaAsSb/GaAs axial configured nanowire-based separate absorption, charge, and multiplication avalanche near-infrared photodetectors
In this study, molecular beam epitaxially grown axially configured ensemble GaAsSb/GaAs
separate absorption, charge, and multiplication (SACM) region-based nanowire avalanche …
separate absorption, charge, and multiplication (SACM) region-based nanowire avalanche …
Engineering of Impact Ionization Characteristics in GaAs/GaAsBi Multiple Quantum Well Avalanche Photodiodes
The presence of large bismuth (Bi) atoms has been shown to increase the spin–orbit
splitting energy in bulk GaAsBi, reducing the hole ionization coefficient (β) and thereby …
splitting energy in bulk GaAsBi, reducing the hole ionization coefficient (β) and thereby …