Over the past decade, the primary focus for improving the performance of nano-electronic
metal interconnect structures has been to reduce the impact of resistance-capacitance (RC) …

Silicon nitride (SiNx) and hydrogenated silicon nitride (SiNx: H) thin films enjoy widespread
scientific interest across multiple application fields. Exceptional combination of optical …

Accelerating interest in silicon nitride thin film material system continues in both academic
and industrial communities due to its highly desirable physical, chemical, and electrical …

This article provides an overview of the state-of-the-art chemistry and processing
technologies for silicon nitride and silicon nitride-rich films, ie, silicon nitride with C inclusion …

As the nanoelectronics industry looks to transition to both three dimensional transistor and
interconnect technologies at the< 22 nm node, highly conformal dielectric coatings with …

Atomic layer deposited (ALD) high-dielectric-constant (high-k) materials have found
extensive applications in a variety of electronic, optical, optoelectronic, and photovoltaic …

Abstract Fourier Transform Infrared (FTIR) Spectroscopy has long been utilized as an
analytical technique for qualitatively determining the presence of various different chemical …

As demand for lower power and higher performance nano-electronic products increases, the
semiconductor industry must adopt insulating materials with progressively lower dielectric …

Silicon nitride (SiN x) films were prepared by plasma enhanced chemical vapor deposition
(PECVD) and different traps were induced in the films by tuning the RF power ratio during …

Continued reduction in resistance-capacitance (RC) delays in nano-electronic Cu
interconnect structures will require new materials with increasingly lower dielectric constants …