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Longitudinal and transverse electric field manipulation of hole spin-orbit qubits in one-dimensional channels
Holes confined in semiconductor nanostructures realize qubits where the quantum-
mechanical spin is strongly mixed with the quantum orbital angular momentum. The …
mechanical spin is strongly mixed with the quantum orbital angular momentum. The …
Four single-spin Rabi oscillations in a quadruple quantum dot
Scaling up qubits is a necessary step to realize useful systems of quantum computation.
Here, we demonstrate coherent manipulations of four individual electron spins using a micro …
Here, we demonstrate coherent manipulations of four individual electron spins using a micro …
Characterization of dot-specific and tunable effective factors in a GaAs/AlGaAs double quantum dot single-hole device
Difference in g factors in multidot structures can form the basis of dot-selective spin
manipulation under global microwave irradiation. Employing electric dipole spin resonance …
manipulation under global microwave irradiation. Employing electric dipole spin resonance …
Isotropic and Anisotropic -Factor Corrections in GaAs Quantum Dots
We experimentally determine isotropic and anisotropic g-factor corrections in lateral GaAs
single-electron quantum dots. We extract the Zeeman splitting by measuring the tunnel rates …
single-electron quantum dots. We extract the Zeeman splitting by measuring the tunnel rates …
-factor of electrons in gate-defined quantum dots in a strong in-plane magnetic field
We analyze orbital effects of an in-plane magnetic field on the spin structure of states of a
gated quantum dot based in a two-dimensional electron gas. Starting with ak· p Hamiltonian …
gated quantum dot based in a two-dimensional electron gas. Starting with ak· p Hamiltonian …
[HTML][HTML] Neutral donors confined in semiconductor coupled quantum dot-rings: Position-dependent properties and optical transparency phenomenon
Electronic properties of a neutral donor confined in a GaAs coupled quantum dot-ring
covered by a Al 0. 3 Ga 0. 7 As matrix were calculated using the finite element method under …
covered by a Al 0. 3 Ga 0. 7 As matrix were calculated using the finite element method under …
[HTML][HTML] AC-gate controlled transport sideband spectroscopy in GaAs quantum channels
A modeling investigation is conducted on the quantum transport in an n-type split-gate
structure controlled by either an AC finger gate or an AC top gate. The quantum …
structure controlled by either an AC finger gate or an AC top gate. The quantum …
Electron g-factor determined for quantum dot circuit fabricated from (110)-oriented GaAs quantum well
T Nakagawa, S Lamoureux, T Fujita… - Journal of Applied …, 2022 - pubs.aip.org
The choice of substrate orientation for semiconductor quantum dot circuits offers
opportunities for tailoring spintronic properties such as g-factors for specific functionality …
opportunities for tailoring spintronic properties such as g-factors for specific functionality …
[PDF][PDF] Measurement of the g-factor anisotropy in a lateral GaAs spin qubit
S Svab - nanoscience.unibas.ch
Spin qubits constitute one of the most promising platforms for large-scale quantum
computation due to their inherent potential to be scalable to a large number of qubits and …
computation due to their inherent potential to be scalable to a large number of qubits and …
Qubits de spin composés de boîtes quantiques et de donneurs dans le silicium
P Harvey-Collard - 2018 - library-archives.canada.ca
L'informatique quantique est en phase de transition. De science fondamentale, elle est
maintenant devenue suffisamment mature pour attirer les investissements des géants de la …
maintenant devenue suffisamment mature pour attirer les investissements des géants de la …