With distinctive advantages spanning excellent flexibility, rich physical properties, strong
electrostatic tunability, dangling-bond-free surface, and ease of integration, 2D layered …

In this review the latest advances in the field of nanostructured photodetectors are
considered, stating the types and materials, and highlighting the features of operation …

In this study, a solution method derived dual‐band photodetector (PD) based on silicon
nanowires/PbS nanocrystalline film n–n heterojunction, which exhibits typical bias …

In this work, a high‐performance two‐terminal n‐MoSe2/p‐GeSn/n‐Ge van der Waals (vdW)
heterojunction phototransistor (HPT) is proposed and demonstrated for short‐wave infrared …

Narrow-bandgap germanium–tin (GeSn) is employed to fabricate metal–semiconductor–
metal (MSM) near-infrared photodetectors with low-dark currents and high responsivity. To …

GeSn/Ge heterojunction photodetectors (PDs) have great potential to outperform
conventional mid-infrared (MIR) sensors. In this work, simulated analysis is performed to …

Photodetectors with considerably high performance working in a wide wavelength range
extending from UV to IR are essential for technological applications. The present work …

Germanium tin (GeSn) holds great potential for the development of monolithic short-wave
infrared (SWIR) photodetectors. However, the large dark current and insufficient …

Silicon-based GeSn short wave infrared (SWIR) photodetectors (PDs) were designed and
fabricated, whose optical response at 2000 nm was enhanced by a carefully designed hole …

Narrow-bandgap germanium–tin (GeSn) is employed to fabricate metal–semiconductor–
metal (MSM) near-infrared photodetectors with low-dark currents and high responsivity. To …