Benefitted from progress on the large-diameter Ga 2 O 3 wafers and Ga 2 O 3 processing
techniques, the Ga 2 O 3 power device technology has witnessed fast advances toward …

As the most stable phase of gallium oxide, β-Ga2O3 can enable high-quality, large-size, low-
cost, and controllably doped wafers by the melt method. It also features a bandgap of 4.7 …

In this study, we fabricated superb-Ga2O3 Schottky barrier diodes (SBDs) with high
breakdown voltage (and low leakage through combining platinum oxide (PtO and anodic …

We demonstrate superb large-area vertical β-Ga 2 O 3 SBDs with a Schottky contact area of
1× 1 mm 2 and obtain a high-efficiency DC–DC converter based on the device. The β-Ga 2 …

Ultra wide bandgap semiconductor beta-gallium oxide (-Ga2O3) has the potential in
fabricating the next generation of power devices applied at high temperature and high …

Abstract Herein, vertical-geometry Pt/(010) β-Ga 2 O 3 Schottky barrier diodes (SBDs) with
various large areas (2.25× 10− 2, 4× 10− 2 to 6.25× 10− 2 cm 2) were fabricated on (010) …

In the present study, the device performance of vertical Au/Ni/β-Ga 2 O 3 Schottky barrier
diodes with regularly aligned inner field plates is investigated. The fabricated Schottky …

This paper presents the 2-D numerical simulation results of the ion-induced single-event
burnout (SEB) in the conventional gallium-oxide (Ga2O3) Schottky barrier diode (SBD) …

Ga 2 O 3 devices have the potential to replace SiC and GaN devices in high voltage power
electronic applications. While development of Ga 2 O 3 devices is in its infancy, a clearer …