Looking beyond 0 and 1: principles and technology of multi‐valued logic devices

M Andreev, S Seo, KS Jung, JH Park - Advanced Materials, 2022 - Wiley Online Library
Ever since the invention of solid‐state transistors, binary devices have dominated the
electronics industry. Although the binary technology links the natural property of devices to …

[BOK][B] Physics of semiconductor devices

SM Sze, Y Li, KK Ng - 2021 - books.google.com
The new edition of the most detailed and comprehensive single-volume reference on major
semiconductor devices The Fourth Edition of Physics of Semiconductor Devices remains the …

Digital circuit applications of resonant tunneling devices

P Mazumder, S Kulkarni, M Bhattacharya… - Proceedings of the …, 1998 - ieeexplore.ieee.org
Many semiconductor quantum devices utilize a novel tunneling transport mechanism that
allows picosecond device switching speeds. The negative differential resistance …

Overview of nanoelectronic devices

D Goldhaber-Gordon, MS Montemerlo… - Proceedings of the …, 1997 - ieeexplore.ieee.org
This paper provides an overview of research developments toward nanometer-scale
electronic switching devices for use in building ultra-densely integrated electronic …

Tunneling-based SRAM

JPA van der Wagt - Proceedings of the IEEE, 1999 - ieeexplore.ieee.org
This paper describes a new high-density low-power circuit approach for implementing static
random access memory (SRAM) using low current density resonant tunneling diodes …

Resonant-tunneling diode and HEMT logic circuits with multiple thresholds and multilevel output

T Waho, KJ Chen, M Yamamoto - IEEE Journal of Solid-State …, 1998 - ieeexplore.ieee.org
By using resonant-tunneling diodes (RTDs) and high electron mobility transistors (HEMTs),
we implement a new class of logic circuits that operate with multiple thresholds and …

Negative differential thermal conductance through vacuum

L Zhu, CR Otey, S Fan - Applied Physics Letters, 2012 - pubs.aip.org
We propose a scheme for achieving negative differential thermal conductance in near-field
electromagnetic thermal transfer. As an example, we show that the scheme can be …

Aspects of systems and circuits for nanoelectronics

KF Goser, C Pacha, A Kanstein… - Proceedings of the …, 1997 - ieeexplore.ieee.org
A large number of devices, a limitation of wiring, and very low power dissipation density are
design constraints of future nanoelectronic circuits composed of quantum-effect devices …

Modulation of rectification and negative differential resistance in graphene nanoribbon by nitrogen do**

P Zhao, DS Liu, SJ Li, G Chen - Physics Letters A, 2013 - Elsevier
By applying the nonequilibrium Greenʼs function formalism combined with density
functional theory, we have investigated the electronic transport properties of two nitrogen …

Voltage-controlled multiple-valued logic design using negative differential resistance devices

KJ Gan, CS Tsai, YW Chen, WK Yeh - Solid-state electronics, 2010 - Elsevier
This paper demonstrates a concise and novel voltage-controlled multiple-valued logic (MVL)
design using the standard BiCMOS technique. This MVL circuit is constructed by a voltage …