In-situ PECVD-based stoichiometric SiO2 layer for semiconductor devices
DP Pham, H Kim, J Choi, D Oh, YB Chung, WS Jeon… - Optical Materials, 2023 - Elsevier
We propose an in-situ stoichiometric SiO 2 layer deposition using plasma-enhanced
chemical vapor deposition (PECVD) to replace typical outside SiO 2 deposition for …
chemical vapor deposition (PECVD) to replace typical outside SiO 2 deposition for …
Double-Barrier Quantum-Well Structure: An Innovative Universal Approach for Passivation Contact for Heterojunction Solar Cells
The main drawbacks of modern solar-cell technologies are low-quality surface passivation,
recombination losses, and carrier selectivity, which limit their efficiency. Therefore, this study …
recombination losses, and carrier selectivity, which limit their efficiency. Therefore, this study …
Investigating the effect of aluminum oxide fixed charge on Schottky barrier height in molybdenum oxide-based selective contacts
A tunneling atomic layer deposited (ALD) AlO x layer was inserted in a Si| SiO x| AlO x| MoO
x| metal tunnel diode structure to investigate the impact of fixed interface charge on Schottky …
x| metal tunnel diode structure to investigate the impact of fixed interface charge on Schottky …
Hydrogenation Strategy for Al2O3/MoOx Passivating Contact in High‐Efficiency Crystalline Silicon Solar Cells
Y Luo, Y Wang, S Liu, S Bao, J Wang, ST Zhang… - Solar …, 2025 - Wiley Online Library
Enhancing carrier selectivity and minimizing surface recombination are crucial factors for
improving the efficiency of passivating contact crystalline silicon (c‐Si) solar cells. This study …
improving the efficiency of passivating contact crystalline silicon (c‐Si) solar cells. This study …
Growth of Aluminum Molybdenum Oxide Films by Atomic Layer Deposition with Using Trimethylaluminum, Molybdenum Oxytetrachloride, and Water
AM Maksumova, IS Bodalev, SI Suleimanov… - Inorganic Materials, 2023 - Springer
In this paper, we report on the growth of aluminum molybdenum oxide (Al x Mo y O z) films
via atomic layer deposition (ALD) with the use of trimethylaluminum (TMA)(Al (CH3) 3) …
via atomic layer deposition (ALD) with the use of trimethylaluminum (TMA)(Al (CH3) 3) …
ТЕРМОДИНАМИЧЕСКОЕ МОДЕЛИРОВАНИЕ ПРОЦЕССОВ МОЛЕКУЛЯРНОГО НАСЛАИВАНИЯ MoO3 НА β-КРИСТОБАЛИТЕ И МОНОСЛОЯХ MoOX И AlOX …
SG Gadjimuradov, SI Suleymanov… - … . СЕРИЯ «ХИМИЯ И …, 2025 - ctj-isuct.ru
Аннотация Проведено квантово-химическое моделирование процессов молекулярного
наслаивания оксида молибдена (VI) на поверхностях β-кристобалита и аморфных …
наслаивания оксида молибдена (VI) на поверхностях β-кристобалита и аморфных …
Thermal Atomic Layer Deposition of Aluminum–Molybdenum Oxide Films Using Trimethylaluminum, Molybdenum Dichloride Dioxide and Water
AM Maksumova, IS Bodalev… - Russian Journal of …, 2024 - Springer
In the present work thermal atomic layer deposition (ALD) of aluminum-molybdenum oxide
films (Al x Mo y O z) using trimethylaluminum (TMA, Al (CH3) 3), molybdenum dichloride …
films (Al x Mo y O z) using trimethylaluminum (TMA, Al (CH3) 3), molybdenum dichloride …
[PDF][PDF] Атомно-слоевое осаждение алюминий-молибденовых оксидных пленок с использованием триметилалюминия, оксотетрахлорида молибдена и воды
ИМ Абдулагатов, МХ Рабаданов… - НЕОРГАНИЧЕСКИЕ …, 2023 - researchgate.net
В работе продемонстрировано атомно-слоевое осаждение (АСО) алюминий-
молибденовых оксидных пленок (AlxMoyOz) с использованием триметилалюминия …
молибденовых оксидных пленок (AlxMoyOz) с использованием триметилалюминия …