Comparing the mechanical and thermal-electrical properties of sintered copper (Cu) and sintered silver (Ag) joints

TF Chen, KS Siow - Journal of alloys and Compounds, 2021 - Elsevier
This review compares the mechanical and thermal-electrical properties of sintered copper
(Cu) with sintered silver (Ag) as bonding materials in the microelectronics joint applications …

A review of SiC power module packaging: Layout, material system and integration

C Chen, F Luo, Y Kang - CPSS Transactions on Power …, 2017 - ieeexplore.ieee.org
Silicon-Carbide (SiC) devices with superior performance over traditional silicon power
devices have become the prime candidates for future high-performance power electronics …

Joining of silver nanomaterials at low temperatures: processes, properties, and applications

P Peng, A Hu, AP Gerlich, G Zou, L Liu… - ACS applied materials …, 2015 - ACS Publications
A review is provided, which first considers low-temperature diffusion bonding with silver
nanomaterials as filler materials via thermal sintering for microelectronic applications, and …

Are sintered silver joints ready for use as interconnect material in microelectronic packaging?

KS Siow - Journal of electronic materials, 2014 - Springer
Silver (Ag) has been under development for use as interconnect material for power
electronics packaging since the late 1980s. Despite its long development history, high …

A review on die attach materials for SiC-based high-temperature power devices

HS Chin, KY Cheong, AB Ismail - Metallurgical and Materials Transactions …, 2010 - Springer
Recently, high-temperature power devices have become a popular discussion topic
because of their various potential applications in the automotive, down-hole oil and gas …

Low-temperature low-pressure die attach with hybrid silver particle paste

K Suganuma, S Sakamoto, N Kagami, D Wakuda… - Microelectronics …, 2012 - Elsevier
New types of die attach pastes comprising micron-sized Ag particles hybridized with
submicron-sized Ag particles were considered as lead-free die attach materials for SiC …

Low-temperature sintered nanoscale silver as a novel semiconductor device-metallized substrate interconnect material

JG Bai, ZZ Zhang, JN Calata… - IEEE Transactions on …, 2006 - ieeexplore.ieee.org
A nanoscale silver paste containing 30-nm silver particles that can be sintered at 280degC
was made for interconnecting semiconductor devices. Sintering of the paste produced a …

Low-temperature sintering with nano-silver paste in die-attached interconnection

T Wang, X Chen, GQ Lu, GY Lei - journal of electronic materials, 2007 - Springer
Traditional materials used in chip-level interconnections are not compatible with the high-
temperature operation of wide-bandgap high-power semiconductor devices; therefore, this …

Review on joint shear strength of nano-silver paste and its long-term high temperature reliability

R Khazaka, L Mendizabal, D Henry - Journal of electronic materials, 2014 - Springer
Soldering has been the main die attach technology for several decades. Recently, in order
to meet the high temperature electronic requirements (high temperature-operating SiC and …

Low-Temperature Sintering of Nanoscale Silver Paste for Attaching Large-Area Chips

TG Lei, JN Calata, GQ Lu, X Chen… - IEEE Transactions on …, 2009 - ieeexplore.ieee.org
A low-temperature sintering technique enabled by a nanoscale silver paste has been
developed for attaching large-area (> 100 mm 2) semiconductor chips. This development …