In recent years, the (Al x Ga 1-x) 2 O 3 materials have attracted intense research interest due
to their considerable potentials in the fabrication of deep-ultraviolet optoelectronic and high …

This Perspective seeks to understand and assess why ultrawide bandgap (UWBG)
semiconductor-based deep-UV photodetectors have not yet found any noticeable presence …

Flexible Ga2O3 photodetectors have attracted considerable interest owing to their potential
use in the development of implantable, foldable, and wearable optoelectronics. In particular …

Ga2O3 has an ultra-wide bandgap of 4.9 eV and is a suitable semiconductor for solar-blind
photodetectors (SBPDs). However, the present study shows that the dark current of the …

Compared to the vacuum-required deposition techniques, the chemical solution deposition
(CSD) technique is superior in terms of low cost and ease of cation adjustment and …

We report on the low-frequency electronic noise in β-(Al x Ga 1− x) 2 O 3 Schottky barrier
diodes. The noise spectral density reveals 1/f dependence, characteristic of the flicker noise …

Inevitable thermal-expansion-coefficient mismatch at the interface of epitaxial-layer/foreign-
substrate is generally considered as a weak side since considerable strain would be …

The crystal structure, electron charge density, band structure, density of states, and optical
properties of pure and strontium (Sr)-doped β-Ga 2 O 3 were studied using the first …

High‐temperature in situ growth of Ga2O3 thin film on flexible substrates for flexible/portable
electronic devices is never realized because the conventional polymer substrates cannot …

β-Ga2O3 is a wide bandgap semiconductor material that is promising for many fields such
as gas sensors, UV detectors, and high-power electronics. Until now, most epitaxial β …