This Review highlights basic and transition metal conducting and semiconducting oxides.
We discuss their material and electronic properties with an emphasis on the crystal …

ABSTRACT Gallium oxide (Ga2O3) is an emerging wide bandgap semiconductor that has
attracted a large amount of interest due to its ultra-large bandgap of 4.8 eV, a high …

In this work, we report record electron mobility values in unintentionally doped β-Ga 2 O 3
films grown by metal-organic chemical vapor deposition. Using degenerately Sn-doped …

Ga2O3 is attractive for power devices and solar-blind ultraviolet photodetectors due to its
ultra-wide bandgap, large breakdown field, and favorable stability. However, it is difficult to …

We report field-plated Schottky rectifiers of various dimensions (circular geometry with
diameter 50–200 μm and square diodes with areas 4× 10− 3–10− 2 cm 2) fabricated on …

This letter demonstrates vertical Ga 2 O 3 Schottky barrier diodes (SBDs) with a novel edge
termination, the small-angle beveled field plate (SABFP), fabricated on thinned substrates …

This paper investigated the growth of (Al x Ga 1− x) 2 O 3 thin films on semi-insulating (010)
Ga 2 O 3 substrates over the entire Al composition range (0%< x≤ 100%) via metalorganic …

Ga2O3 has gained intensive attention for the continuing myth of the electronics as a new-
generation wide bandgap semiconductor, owing to its natural physical and chemical …

In this work, we demonstrate modulation-doped β-(Al x Ga 1-x) 2 O 3/Ga 2 O 3 double
heterostructure field effect transistors. The maximum sheet carrier density for a two …