A review of recent applications of Raman spectroscopy as a fast, sensitive, and non-
destructive technique for exploring II–VI semiconductor nanocrystals fabricated by various …

Single photon emission from an epitaxially grown quantum dot at room temperature is
presented. CdSe/ZnSSe quantum dots are embedded into MgS barriers, providing dominant …

The influence of the growth conditions during cap** of CdSe/ZnSe quantum structures
grown on GaAs (001) by molecular-beam epitaxy (MBE) were systematically investigated by …

We have studied the temperature dependence of the photoluminescence (PL) spectra of
molecular beam epitaxy grown ultrathin Zn 1− x Cd x S e/Z n S e quantum wells with random …

Intermediate band solar cells can potentially have an efficiency of~ 63% under full solar
concentration, but the material systems investigated until now are far from optimum and are …

The two-dimensional–three-dimensional transition of a strained CdSe layer on (001) ZnSe
induced by the use of amorphous selenium is studied. To precisely control the thickness of …

High temperature operation of an electrically driven single photon emitter based on a single
epitaxial quantum dot is reported. CdSe/ZnSSe/MgS quantum dots are embedded into a pin …

Abstract Quaternary Cd1–y Zny S1–x Sex nanocrystals are obtained in a borosilicate glass
matrix by solid‐state precipitation at temperatures within 625 to 700° C. Raman …

This study investigates the effects of electron beam irradiation on the lasing characteristics of
optically pumped CdSe quantum dot (QD) lasers grown on GaAs substrates using molecular …

The formation of quaternary Cd1− yZnyS1− xSex nanocrystals in a borosilicate glass matrix
due to incorporation of zinc into CdS1− xSex quantum dots under heat treatment is …