We present a comprehensive and up-to-date compilation of band parameters for all of the
nitrogen-containing III–V semiconductors that have been investigated to date. The two main …

During the last few years the interest in the indium nitride (InN) semiconductor has been
remarkable. There have been significant improvements in the growth of InN films. High …

The three volumes of this handbook treat the fundamentals, technology and nanotechnology
of nitride semiconductors with an extraordinary clarity and depth. They present all the …

High-quality wurtzite-structured In-rich In1xGaxN films (0x 0.5) have been grown on
sapphire substrates by molecular beam epitaxy. Their optical properties were characterized …

The authors review the band line-ups and band offsets between semiconductors, dielectrics,
and metals, including the theory, experimental data, and the chemical trends. Band offsets …

The fundamental band gap of InN has been thought to be about 1.9 eV for a long time.
Recent developments of metalorganic vapor phase epitaxy (MOVPE) and RF-molecular …

The concept of hot carrier solar cells is discussed in terms of carrier cooling, conditions of
energy-and carrier-selectivity for the energy selective contacts and macroscopic device …

In this paper we review the basic theoretical aspects as well as some important experimental
results of the band anticrossing effects in highly electronegativity-mismatched …

A survey of most recent studies of optical absorption, photoluminescence,
photoluminescence excitation, and photomodulated reflectance spectra of single‐crystalline …

We describe the process of Förster transfer between semiconductor nanoparticles in the
presence of a metal subsystem (metal nanocrystals). In the presence of metal nanocrystals …