This paper presents the basis of the modeling of the MOS transistor for circuit simulation at
RF. A physical equivalent circuit that can easily be implemented as a Spice subcircuit is first …

The increase of consumer electronics and communications applications using Radio
Frequency (RF) and microwave circuits has implications for oscillator design. Applications …

This is the first book dedicated to the next generation of MOSFET models. Addressed to
circuit designers with an in-depth treatment that appeals to device specialists, the book …

This chapter covers device and circuit aspects of low-power analog CMOS circuit design.
The fundamental limits constraining the design of low-power circuits are first recalled with an …

In this paper, the implications of inversion charge linearization in compact MOS transistor
modeling are discussed. The charge-sheet model provides the basic relation among …

CMOS passive mixer linearity is analyzed using a Volterra-series analysis and closed-form
expressions for IIP 2, two-tone IIP 3, and cross-modulation IIP 3 are presented, exhibiting …

The constant-current (CC) method uses a current criterion to determine the threshold voltage
(V TH) of metal-oxide-semiconductor (MOS) field-effect transistors. We show that using the …

Parameter extraction is an important part of model development. The goal of parameter
extraction and optimization is to determine such values of device model parameters that …

This paper exploits a universal current-based definition of the threshold voltage (VT) and
discusses some direct methods to measure it. The consistency, accuracy, and sensitivity of …

A novel method for extracting threshold voltage and substrate effect parameters of MOSFETs
with constant current bias at all levels of inversion is presented. This generalized constant …