This work reports highly sensitive and linear temperature sensors based on epitaxial silicon
carbide (SiC). Circular shaped Ni/4H-nSiC Schottky barrier diode (SBD) temperature …

In this work, a highly linear temperature sensor based on a silicon carbide (SiC) pn diode is
presented. Under a constant current biasing, the diode has an excellent linear response to …

In this paper,. an accurate analytical model has been developed to optimize the
performance of an Interdigitated Graphene Electrode/p-silicon carbide (IGE/p-4H-SiC) Metal …

The processing, particularly, etching of brittle, hard, and anti-corrosion materials represented
by the third-generation wide bandgap semiconductor silicon carbide (SiC), is a significant …

This article provides for the first time a very extensive experimental characterization coupled
with a fully analytical modeling in order to investigate, in a systematic and comprehensive …

The current conduction mechanisms (CCMs), temperature-sensitivities (S), energy-
dependent interface traps (N ss), and origin of the intersection points in the forward bias (IF …

p-NiO/n-GaN heterostructure diodes with different anode diameters were fabricated and
comprehensively characterized for temperature sensor application. The circular diodes with …

Vertical GaN Schottky barrier diode was fabricated as temperature sensor by using a
thermally stable TiN anode. The current-voltage characteristics of the diode measured at …

We report that the sensitive temperature response and possible Conduction Mechanisms
(CMs) of Au/graphene-PVP/n-Si type Schottky diodes (SDs) are investigated using the …

We have measured the current? voltage-temperature (IVT) characteristics of the Au/n-
GaAs/In Schottky barrier diodes (SBDs) to introduce their thermal sensitivity mechanism. The …