Semiconductor photonics is an advanced field, both from fundamental and applicative points
of view, aimed at the integration of the unique features of optical communications and …

We demonstrate single-photon emission from self-assembled m-plane InGaN quantum dots
(QDs) embedded on the side-walls of GaN nanowires. A combination of electron …

We report on optical characterization of self-assembled InGaN quantum dots (QDs) grown
on three GaN pseudo-substrates with differing threading dislocation densities. QD density is …

We present a method for designing quantum light sources, emitting in the visible band, using
wurtzite In x Ga1–x N quantum dots (QDs) in a GaN matrix. This system is significantly more …

Intraband optical transitions in semiconductor quantum dots (QDs) in the forms of a
parallelepiped, sphere, and cylinder have been considered. It is shown that the size …

We demonstrate that semiconductor quantum dots can be excited efficiently in a resonant
three-photon process, while resonant two-photon excitation is highly suppressed. Time …

We present a compact interferometric autocorrelator that allows the characterization of
ultrashort laser pulses in the visible light domain (370–740 nm). The presented device uses …

We observed crossed transitions and anti‐Stokes emissions in single quantum‐dot‐like
objects embedded in the active layer of InGaN/GaN quantum disks by two‐photon …

The backward stimulated Bragg scattering (SBgS) of CdTe x Se 1− x quantum dots in
chloroform is investigated at three pump laser wavelengths (532, 816, and 1064 nm) in …

Experimental investigations of single InGaN/GaN quantum dots grown on the non-polar (11-
20) plane are presented. The electrical driving of non-polar nitride quantum dots is …