Charge trap** at oxide defects fundamentally affects the reliability of MOS transistors. In
particular, charge trap** has long been made responsible for random telegraph and 1/f …

Negative bias temperature instability (NBTI), in which interface traps and positive oxide
charge are generated in metal–oxide–silicon (MOS) structures under negative gate bias, in …

One of the most important degradation modes in CMOS technologies, the bias temperature
instability (BTI) has been known since the 1960s. Already in early interpretations, charge …

Negative bias temperature instability has become an important reliability concern for ultra-
scaled Silicon IC technology with significant implications for both analog and digital circuit …

Different physics-based negative bias temperature instability (NBTI) models as proposed in
the literature are reviewed, and the predictive capability of these models is benchmarked …

Today, micro-electronic circuits are undeniably and ubiquitously present in our society.
Transportation vehicles such as cars, trains, buses, and airplanes make abundant use of …

Negative bias temperature instability (NBTI) has become the dominant reliability concern for
nanoscale PMOS transistors. In this paper, a predictive model is developed for the …

Negative bias temperature instability (NBTI) and channel hot carrier (CHC) are the leading
reliability concerns for nanoscale transistors. The de facto modeling method to analyze CHC …

Negative bias temperature instability (NBTI) is a well-known reliability concern for PMOS
transistors. We review the literature to find seven key experimental features of NBTI …

Negative bias temperature instability (NBTI) has the potential to become one of the main
show-stoppers of circuit reliability in nanometer scale devices due to its deleterious effects …