N-polar GaN epitaxy and high electron mobility transistors
This paper reviews the progress of N-polar ($000\mathop 1\limits^\_ $) GaN high frequency
electronics that aims at addressing the device scaling challenges faced by GaN high …
electronics that aims at addressing the device scaling challenges faced by GaN high …
Development of GaN HEMTs fabricated on silicon, silicon-on-insulator, and engineered substrates and the heterogeneous integration
LH Hsu, YY Lai, PT Tu, C Langpoklakpam, YT Chang… - Micromachines, 2021 - mdpi.com
GaN HEMT has attracted a lot of attention in recent years owing to its wide applications from
the high-frequency power amplifier to the high voltage devices used in power electronic …
the high-frequency power amplifier to the high voltage devices used in power electronic …
N-polar GaN cap MISHEMT with record power density exceeding 6.5 W/mm at 94 GHz
A novel N-Polar GaN cap (MIS) high electron mobility transistor demonstrating record 6.7-
W/mm power density with an associated power-added efficiency of 14.4% at 94 GHz is …
W/mm power density with an associated power-added efficiency of 14.4% at 94 GHz is …
N-polar deep recess MISHEMTs with record 2.9 W/mm at 94 GHz
W-band power performance is reported on an N-polar GaN HEMT for the first time, resulting
in a record output power density for any GaN device on a sapphire substrate. This result is …
in a record output power density for any GaN device on a sapphire substrate. This result is …
Investigation of the interface between LPCVD-SiNx gate dielectric and III-nitride for AlGaN/GaN MIS-HEMTs
The interface between silicon nitride (SiN x) gate dielectric grown by low pressure chemical
vapor deposition (LPCVD) and III-nitride heterostructure is investigated by a systematical …
vapor deposition (LPCVD) and III-nitride heterostructure is investigated by a systematical …
Comparative study of AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors with Al2O3 and HfO2 gate oxide
E Miyazaki, Y Goda, S Kishimoto, T Mizutani - Solid-state electronics, 2011 - Elsevier
AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors (MOSHFETs)
with Al 2 O 3 gate oxide which was deposited by atomic layer deposition (ALD) were …
with Al 2 O 3 gate oxide which was deposited by atomic layer deposition (ALD) were …
N-polar III-nitride transistors
This chapter reviews the historical development and present status of N-polar 000 1¯ GaN
high electron mobility transistors (HEMTs) that aim at addressing the device scaling …
high electron mobility transistors (HEMTs) that aim at addressing the device scaling …
Interface roughness scattering in ultra-thin N-polar GaN quantum well channels
In this Letter, we report experimental and theoretical investigations on the effect of the
channel thickness on the low-field electron mobility in N-polar GaN quantum well channels …
channel thickness on the low-field electron mobility in N-polar GaN quantum well channels …
Very high channel conductivity in ultra-thin channel N-polar GaN/(AlN, InAlN, AlGaN) high electron mobility hetero-junctions grown by metalorganic chemical vapor …
Different back barrier designs comprising of AlN, AlGaN, and InAlN layers are investigated
for ultra-thin GaN channel N-polar high-electron-mobility-transistors grown by metalorganic …
for ultra-thin GaN channel N-polar high-electron-mobility-transistors grown by metalorganic …
High-performance N-polar GaN enhancement-mode device technology
In this paper, we report the recent progress in the high-frequency performance of
enhancement-mode devices in the novel N-polar GaN technology and provide a pathway for …
enhancement-mode devices in the novel N-polar GaN technology and provide a pathway for …