Thermomechanical issues of high power laser diode catastrophic optical damage

J Souto, JL Pura, J Jiménez - Journal of Physics D: Applied …, 2019 - iopscience.iop.org
Catastrophic optical damage (COD) of high power laser diodes is a crucial factor limiting
ultra high power lasers. The understanding of the COD process is essential to improve the …

Catastrophic Optical Damage in Semiconductor Lasers: Physics and New Results on InGaN High‐Power Diode Lasers

M Hempel, S Dadgostar, J Jiménez… - physica status solidi …, 2022 - Wiley Online Library
Among the limitations known from semiconductor lasers, catastrophic optical damage (COD)
is perhaps the most spectacular power‐limiting mechanism. Here, absorption and …

Precise facet temperature distribution of high-power laser diodes: Unpumped window effect

J Michaud, P Del Vecchio, L Béchou… - IEEE Photonics …, 2015 - ieeexplore.ieee.org
A thermoreflectance technique is used to evaluate the temperature variations at the output
facet of high-power GaAs-based laser diodes emitting at 980 nm. Two kinds of diodes with …

Catastrophic optical damage in 808 nm broad area laser diodes: a study of the dark line defect propagation

S Dadgostar, JL Pura, I Mediavilla, J Souto… - Optics …, 2022 - opg.optica.org
We present a study of the propagation of dark line defects (DLDs) in catastrophically
damaged 808 nm laser diodes, based on cathodoluminescence (CL) measurements and …

Kinetics of catastrophic optical damage in GaN-based diode lasers

M Hempel, JW Tomm, B Stojetz, H König… - Semiconductor …, 2015 - iopscience.iop.org
Catastrophic optical damage (COD) in 450 nm emitting InGaN/GaN diode lasers is artificially
provoked by applying single sub-microsecond current pulses of increasing amplitude …

CL as a tool for device characterisation: the case of laser diode degradation

S Dadgostar, J Souto, J Jiménez - Nano Express, 2021 - iopscience.iop.org
Cathodoluminescence is a powerful technique for the characterization of semiconductors.
Due to its high spatial resolution, it is emerging as a suitable method for the study of …

Long-term aging and quick stress testing of 980-nm single-spatial mode lasers

M Hempel, JW Tomm, D Venables… - Journal of Lightwave …, 2015 - ieeexplore.ieee.org
Single-spatial mode lasers emitting at 980 nm are studied during continuous-wave long-
term operation and ultra-high power short-term operation (stress-test) up to 13.5 W. We find …

Evaluation of structural and microscopic properties of tetragonal ZrO2 for the facet coating of 980 nm semiconductor laser diodes

VK Dixit, A Marathe, G Bhatt, SK Khamari… - Journal of Physics D …, 2015 - iopscience.iop.org
ZrO 2 based antireflection coatings are expected to show a high laser induced damage
threshold in the facet coating applications of laser diodes. A single layer of undoped ZrO 2 …

Short‐wavelength infrared defect emission as a probe of degradation processes in 980 nm single‐mode diode lasers

M Hempel, JW Tomm, F Yue, MA Bettiati… - Laser & Photonics …, 2014 - Wiley Online Library
Infrared emission from 980‐nm single‐mode high power diode lasers is recorded and
analyzed in the wavelength range from 0.8 to 8.0 μm. A pronounced short‐wavelength …

High optical strength GaAs-based laser structures

MA Bettiati - Microelectronics Reliability, 2013 - Elsevier
The optical-strength properties of 3S PHOTONICS GaAs-based semiconductor laser
structures are presented. After some general considerations about this robustness issue …