Nonpolar and semipolar III-nitride-based blue and green light-emitting diodes (LEDs) have
been extensively investigated as potential replacements for current polar c-plane LEDs …

The performance of III‐nitride devices is degraded by polarization in a wurtzite crystal
structure. Nonpolar and semipolar III‐nitrides have been extensively studied since the early …

Single-crystalline GaN-based light-emitting diodes (s-LEDs) on crystalline sapphire wafers
can provide point-like light sources with high conversion efficiency and long working …

Non-and semipolar GaN-based optoelectronic device structures have attracted much
attention in recent years. Best results have been obtained on small bulk substrates cut from …

Semiconductor materials play a crucial role in the development of optoelectronics and
power devices. However, their evaluation and selection pose a multi-attribute decision …

In this work, we demonstrate high-performance electrically injected GaN/InGaN core-shell
nanowire-based LEDs grown using selective-area epitaxy and characterize their electro …

We present the first demonstration of RF characteristics of electrically injected GaN/InGaN
core–shell nanowire-based micro light-emitting diodes (μLEDs) for μLED displays and …

In the past few years, tremendous progress has been demonstrated on epitaxial growth and
processing of group III nitride nano‐and microrods (NAMs). This has also enabled the …

Nitride-based three-dimensional core–shell nanorods (NRs) are promising candidates for
the achievement of highly efficient optoelectronic devices. For a detailed understanding of …

Multi-color and broadband visible emission was realized thorough the hexagonal annular
structure of GaN. The annular structure fabricated by selective-area growth emitted purple …