[HTML][HTML] Impact of metal diffusion, lattice distortions, native defects, and ambient on dielectric breakdown in Ni–Ga2O3 Schottky diodes
Ga 2 O 3 unipolar devices are of high interest due to their∼ 8 MV/cm predicted breakdown
fields, which have not yet been achieved due to premature device failure. Pre-and post …
fields, which have not yet been achieved due to premature device failure. Pre-and post …
Reliability of 1.5 × 1.5 mm2 β‐Ga2O3 Power Diodes and Application in DC–DC Converter
High breakdown voltage and exceptional robustness make β‐Ga2O3 power devices a key
focus of current research. Despite growing attention to the reliability of β‐Ga2O3 devices …
focus of current research. Despite growing attention to the reliability of β‐Ga2O3 devices …