Short-wave infrared cavity resonances in a single GeSn nanowire
Nanowires are promising platforms for realizing ultra-compact light sources for photonic
integrated circuits. In contrast to impressive progress on light confinement and stimulated …
integrated circuits. In contrast to impressive progress on light confinement and stimulated …
Deterministic creation of strained color centers in nanostructures via high-stress thin films
Color centers have emerged as a leading qubit candidate for realizing hybrid spin-photon
quantum information technology. One major limitation of the platform, however, is that the …
quantum information technology. One major limitation of the platform, however, is that the …
Germanium based photonic components toward a full silicon/germanium photonic platform
V Reboud, A Gassenq, JM Hartmann, J Widiez… - Progress in Crystal …, 2017 - Elsevier
Lately, germanium based materials attract a lot of interest as they can overcome some limits
inherent to standard Silicon Photonics devices and can be used notably in Mid-Infra-Red …
inherent to standard Silicon Photonics devices and can be used notably in Mid-Infra-Red …
Strained germanium nanowire optoelectronic devices for photonic-integrated circuits
Strained germanium nanowires have recently become an important material of choice for
silicon-compatible optoelectronic devices. While the indirect bandgap nature of germanium …
silicon-compatible optoelectronic devices. While the indirect bandgap nature of germanium …
Suspended germanium membranes photodetector with tunable biaxial tensile strain and location-determined wavelength-selective photoresponsivity
A divergent microstructure was fabricated by complementary metal–oxide–semiconductor
compatible processes on the central region of a Ge p–i–n photodetector to enhance the …
compatible processes on the central region of a Ge p–i–n photodetector to enhance the …
Broadband 400-2400 nm Ge heterostructure nanowire photodetector fabricated by three-dimensional Ge condensation technique
G Lin, D Liang, C Yu, H Hong, Y Mao, C Li, S Chen - Optics Express, 2019 - opg.optica.org
A 2.7% tensile strained Ge/SiGe heterostructure nanowire (NW) is in-situ fabricated by a
three-dimensional Ge condensation method. The NW metal-semiconductor-metal (MSM) …
three-dimensional Ge condensation method. The NW metal-semiconductor-metal (MSM) …
Germanium vertically light-emitting micro-gears generating orbital angular momentum
Germanium (Ge) is capturing researchers' interest as a possible optical gain medium
implementable on complementary metal-oxide-semiconductor (CMOS) chips. Band-gap …
implementable on complementary metal-oxide-semiconductor (CMOS) chips. Band-gap …
Active nanophotonics: inverse design and strained germanium light emitters
J Petykiewicz - 2016 - search.proquest.com
Integration of optical devices into modern CMOS electronics processes offers a wide range
of opportunities and challenges for optical design. Modern foundry processes provide an …
of opportunities and challenges for optical design. Modern foundry processes provide an …
Comparison of uniaxial and polyaxial suspended germanium bridges in terms of mechanical stress and thermal management towards a CMOS compatible light …
Germanium (Ge) is a promising candidate for a CMOS compatible laser diode. This is due to
its compatibility with Silicon (Si) and its ability to be converted into a direct band gap material …
its compatibility with Silicon (Si) and its ability to be converted into a direct band gap material …
Photoluminescence study of interband transitions in few-layer, pseudomorphic, and strain-unbalanced Ge/GeSi multiple quantum wells
In this paper we investigate the structural and optical properties of few strain-unbalanced
multiple Ge/GeSi quantum wells pseudomorphically grown on GeSi reverse-graded …
multiple Ge/GeSi quantum wells pseudomorphically grown on GeSi reverse-graded …