Gallium nitride (GaN) and its allied binaries InN and AIN as well as their ternary compounds
have gained an unprecedented attention due to their wide-ranging applications …

The broad photoluminescence band with a maximum at about 2.9 eV widely observed in
undoped epitaxial GaN is studied as a function of temperature and excitation intensity. We …

The three volumes of this handbook treat the fundamentals, technology and nanotechnology
of nitride semiconductors with an extraordinary clarity and depth. They present all the …

Defect related states and excitonic transitions in epitaxial GaN have been studied by
combining cathodoluminescence and transmission electron microscopy. A series of deep …

Structural and optical properties of freshly created and in-grown dislocations in GaN single
crystal are investigated by Raman and cathodoluminescence (CL) microscopy. The …

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Abstract Secondary Ion Mass Spectrometry (SIMS) is an extremely powerful technique for
analysing surfaces, owing in particular to its excellent sensitivity, high dynamic range, very …

Transient behavior of the 2.3, 2.9 and 3.27 eV photoluminescence (PL) bands in undoped
GaN is studied. A non-exponential decay of PL intensity is observed for all three bands after …

Helium ion microscopy has been employed to investigate the ionoluminescence of various
semiconductors. We have verified the possibility of application of this technique for high …

The effect of indentation on the cathodoluminescence (CL) of GaN: Si epitaxial films has
been investigated in the scanning electron microscope. Deformation produces changes in …