Recent years have witnessed GaN-based devices delivering their promise of
unprecedented power and frequency levels and demonstrating their capability as an able …

Gallium nitride (GaN) is one of the front-runner materials among the so-called wide bandgap
semiconductors that can provide devices having high breakdown voltages and are capable …

This comprehensive review delves into the intricate realm of GaN-based metal–oxide–
semiconductor (MOS) high-electron-mobility transistors (HEMTs), providing an exhaustive …

In this letter, we report an in-situ predeposition plasma nitridation process, which is adopted
to remove the GaN surface oxygen-related bonds and reduce surface dangling bonds by …

The superior physical and electrical properties of aluminum oxynitride (AlON) gate
dielectrics on AlGaN/GaN substrates in terms of thermal stability, reliability, and interface …

In this work, we report on the fabrication of a normally‐off AlGaN/GaN Metal–Oxide–
Semiconductor High Electron Mobility Transistor (MOS‐HEMT) using an ultra‐thin Al0 …

Post-etch surface treatment technique was developed for normally-OFF recess-gate Al 2 O
3/AlGaN/GaN metal–oxide–semiconductor high-electron-mobility tran-sistors (MOS-HEMTs) …

In this letter, an AlGaN/GaN MOS-HEMT was demonstrated using a 5-nm-thick SiO x
dielectric layer deposited by plasma enhanced chemical vapor deposition (PECVD) as a …

Controlling properties of GaN/dielectric interfaces is crucial for determining the
characteristics of MOS-HEMT devices and their stability. Interface properties are largely …

This letter reports on a new method for the characterization of transistors transient self-
heating based on gate end-to-end resistance measurement. An alternative power signal is …