In this Colloquium the theory of silicon nanowires is reviewed. Nanowires with diameters
below 10 nm are the focus, where quantum effects become important and the properties …

A comprehensive investigation of quantum confinement in nanowires has been carried out.
Though applied to silicon nanowires (SiNWs), it is general and applicable to all nanowires …

A variety of silicon-based nanostructures with dimensions in the 1–5 nm range now emit
tunable photoluminescence (PL) spanning the visible range. Achievement of high …

Nanocomposites with constituent sizes of< 50 nm are considered as a promising approach
to enhance the figure of merit of bulk thermoelectric materials. A simple route involving …

The thermal conductivity of silicon nanowires (SiNWs) is investigated by molecular dynamics
(MD) simulation. It is found that the thermal conductivity of SiNWs can be reduced …

Band gap modification for small-diameter (∼ 1 nm) silicon nanowires resulting from the use
of different species for surface termination is investigated by density functional theory …

Repetitive hot deformation has been demonstrated as a new approach to obtain high-
performance n-type bismuth–telluride-based alloys, benefiting from the deformation-induced …

We compute the lattice thermal conductivity (κ) of silicon nanowires as a function of
temperature by molecular dynamics simulations. In wires with amorphous surfaces κ may …

One of the major challenges toward Si nanowire (SiNW) based photonic devices is
controlling the electronic band structure of the Si nanowire to obtain a direct band gap. Here …

We present molecular dynamics simulations of [110]-oriented Si nanowires (NWs) under a
constant strain rate in tension until failure, using the modified embedded-atom-method …