In the present-day scenario of low-power electronics, there is a steady and increasing need
for an adequate device that can counteract the power dissipation issue due to the consistent …

Ferroelectric materials, with their spontaneous electric polarization, are renewing research
enthusiasm for their deployment in high-performance micro/nano energy harvesting devices …

A contact resistance () becomes a major parasitic resistance in highly scaled modern
semiconductor devices. A wrap-around contact (WAC) has been suggested as a promising …

Extensive research has been directed towards HfO x-based ferroelectric capacitor in
contrast to perovskite-based ferroelectric capacitors. HfO x-based ferroelectric capacitor …

The paper presents a dielectrically modulated negative capacitance Germanium source
vertical tunnel FET (DM-NC-Ge-vTFET) biosensor for detection of non-tumorigenic breast …

This paper proposes the structure of a vertical PNPN single gated feedback field-effect
transistor (vertical FBFET) and investigates its performance using a TCAD simulator. The …

In the present research article, we have proposed an analytical compact model for nanowire
Junctionless Gate-All-Around (JLNGAA) MOSFET validated in all transistor's operation …

Tunnel FET is a gate-controlled, field effect transistor, followed band to band tunneling
(BTBT) transport of charge carriers, having low subthreshold swing (SS< 60 Mv decade− 1 …

In pursuit of lowering power densities and reducing energy efficiency constraints, execution
grid of arising electronic devices are being investigated to track down alternative options for …

This study investigates the effects of temperature on RF/Analog and linearity parameters
using a 3 nm technology node Step-Negative capacitance FinFET (SNC-FinFET) for the first …