Computing the properties of materials from first principles with SIESTA
SIESTA was developed as an approach to compute the electronic properties and perform
atomistic simulations of complex materials from first principles. Very large systems, with an …
atomistic simulations of complex materials from first principles. Very large systems, with an …
Modeling of defect generation during plasma etching and its impact on electronic device performance—plasma-induced damage
K Eriguchi - Journal of Physics D: Applied Physics, 2017 - iopscience.iop.org
The increasing demand for the higher performance of ultra-large-scale integration (ULSI)
circuits requires the aggressive shrinkage of device feature sizes in accordance with the …
circuits requires the aggressive shrinkage of device feature sizes in accordance with the …
Stability of defects in crystalline silicon and their role in amorphization
Using molecular-dynamics simulation techniques, we have investigated the role that point
defects and interstitial-vacancy complexes have on the silicon amorphization process. We …
defects and interstitial-vacancy complexes have on the silicon amorphization process. We …
Defect generation in electronic devices under plasma exposure: Plasma-induced damage
K Eriguchi - Japanese Journal of Applied Physics, 2017 - iopscience.iop.org
The increasing demand for higher performance of ULSI circuits requires aggressive
shrinkage of device feature sizes in accordance with Moore's law. Plasma processing plays …
shrinkage of device feature sizes in accordance with Moore's law. Plasma processing plays …
Radiation damage in silicon exposed to high-energy protons
G Davies, S Hayama, L Murin, R Krause-Rehberg… - Physical Review B …, 2006 - APS
Photoluminescence, infrared absorption, positron annihilation, and deep-level transient
spectroscopy (DLTS) have been used to investigate the radiation damage produced by 24 …
spectroscopy (DLTS) have been used to investigate the radiation damage produced by 24 …
Photoluminescence signature of silicon interstitial cluster evolution from compact to extended structures in ion-implanted silicon
PK Giri - Semiconductor science and technology, 2005 - iopscience.iop.org
Low temperature photoluminescence (PL) studies have been carried out on ion-implanted
silicon in order to elucidate upon the structure evolution of the self-interstitial (I) clusters as a …
silicon in order to elucidate upon the structure evolution of the self-interstitial (I) clusters as a …
Density-functional study of small interstitial clusters in Si: Comparison with experiments
Local density functional calculations are carried out on models of tri-and tetra-self-interstitial
clusters in Si. Electrical levels and local vibrational modes (LVMs) of the defects are found …
clusters in Si. Electrical levels and local vibrational modes (LVMs) of the defects are found …
Complexity of small silicon self-interstitial defects
The combination of long-time, tight-binding molecular dynamics and real-time
multiresolution analysis techniques reveals the complexity of small silicon interstitial defects …
multiresolution analysis techniques reveals the complexity of small silicon interstitial defects …
Iron in silicon: Interactions with radiation defects, carbon, and oxygen
First-principles theory is used to calculate the interactions between interstitial iron or the iron-
boron pair and a vacancy, between interstitial iron and a divacancy, oxygen-vacancy pair …
boron pair and a vacancy, between interstitial iron and a divacancy, oxygen-vacancy pair …
[КНИГА][B] Silicon, germanium, and their alloys: growth, defects, impurities, and nanocrystals
G Kissinger, S Pizzini - 2014 - books.google.com
Despite the vast knowledge accumulated on silicon, germanium, and their alloys, these
materials still demand research, eminently in view of the improvement of knowledge on …
materials still demand research, eminently in view of the improvement of knowledge on …