MBE growth and characterization of type-II InAs/GaSb superlattices for mid-infrared detection
Type-II InAs/GaSb superlattices (SLs) made of 10 InAs monolayers (MLs) and 10 GaSb MLs,
designed to have a cut-off wavelength of 5.4 μm, have been grown on GaSb substrates by …
designed to have a cut-off wavelength of 5.4 μm, have been grown on GaSb substrates by …
Structural design and molecular beam epitaxy growth of GaAs and InAs heterostructures for high mobility two-dimensional electron gas
T Wang, H Song, K He - Quantum Frontiers, 2024 - Springer
This review aims to provide a comprehensive overview of the development and current
understanding of GaAs and InAs heterostructures, with a special emphasis on achieving …
understanding of GaAs and InAs heterostructures, with a special emphasis on achieving …
[書籍][B] High-k gate dielectrics for CMOS technology
G He, Z Sun - 2012 - books.google.com
A state-of-the-art overview of high-k dielectric materials for advanced field-effect transistors,
from both a fundamental and a technological viewpoint, summarizing the latest research …
from both a fundamental and a technological viewpoint, summarizing the latest research …
Bandgap engineering, monolithic growth, and operation parameters of GaSb-based SESAMs in the 2–2.4 µm range
We present the detailed growth and characterization of novel GaSb-based semiconductor
saturable absorber mirrors (SESAMs) operating in the 2–2.4 µm spectral range. These …
saturable absorber mirrors (SESAMs) operating in the 2–2.4 µm spectral range. These …
High-quality GaSb epitaxially grown on Si (001) through defects self-annihilation for CMOS-compatible near-IR light emitters
T Tang, W Zhan, C Shen, M Li, B Xu, Z Wang… - Optical Materials …, 2022 - opg.optica.org
Direct epitaxial growth of III-V materials on complementary metal-oxide-semiconductor
(CMOS)-compatible Si substrates has long been a scientific and engineering problem for …
(CMOS)-compatible Si substrates has long been a scientific and engineering problem for …
MBE-grown long-wavelength interband cascade lasers on InAs substrates
An interband cascade (IC) laser structure with an emission wavelength designed to be near
11 μm was grown by molecular beam epitaxy on an InAs substrate. Defects and surface …
11 μm was grown by molecular beam epitaxy on an InAs substrate. Defects and surface …
Nanohole etching in AlGaSb with gallium droplets
We demonstrate nanohole formation in AlGaSb by Ga droplet etching within a temperature
range from 270 to 500° C, allowing a wide range of tunability of the nanohole density. By …
range from 270 to 500° C, allowing a wide range of tunability of the nanohole density. By …
Carrier lifetime studies in midwave infrared type-II InAs/GaSb strained layer superlattice
The authors report on an investigation of the dependence of the minority carrier lifetime in
midwave infrared InAs/GaSb strained layer superlattices on a number of varied parameters …
midwave infrared InAs/GaSb strained layer superlattices on a number of varied parameters …
Molecular beam epitaxy growth of high quantum efficiency InAs/GaSb superlattice detectors
GJ Sullivan, A Ikhlassi, J Bergman… - Journal of Vacuum …, 2005 - pubs.aip.org
InAs/GaSb superlattices are leading candidates for next generation long-wave infrared and
very-long-wave infrared photodetectors. These heterostructures are expected to hold …
very-long-wave infrared photodetectors. These heterostructures are expected to hold …
Unambiguous determination of carrier concentration and mobility for InAs/GaSb superlattice photodiode optimization
In this communication we report on electrical properties of nonintentionally doped (nid) type
II InAs/GaSb superlattice grown by molecular beam epitaxy. We present a simple …
II InAs/GaSb superlattice grown by molecular beam epitaxy. We present a simple …