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CMOS‐technology‐enabled flexible and stretchable electronics for internet of everything applications
Flexible and stretchable electronics can dramatically enhance the application of electronics
for the emerging Internet of Everything applications where people, processes, data and …
for the emerging Internet of Everything applications where people, processes, data and …
Overview of recent direct wafer bonding advances and applications
H Moriceau, F Rieutord, F Fournel… - Advances in Natural …, 2010 - iopscience.iop.org
Direct wafer bonding processes are being increasingly used to achieve innovative stacking
structures. Many of them have already been implemented in industrial applications. This …
structures. Many of them have already been implemented in industrial applications. This …
Subnanometer linewidth uniformity in silicon nanophotonic waveguide devices using CMOS fabrication technology
We report subnanometer linewidth uniformity in silicon nanophotonics devices fabricated
using high-volume CMOS fabrication tools. We use wavelength-selective devices such as …
using high-volume CMOS fabrication tools. We use wavelength-selective devices such as …
Surface Roughness of Hydrogen Ion Cut Low Temperature Bonded Thin Film Layers
YA Li, RW Bower - Japanese Journal of Applied Physics, 2000 - iopscience.iop.org
We have observed that wafer splitting from hydrogen ion implantation into silicon after low
temperature direct bonding creates an expunged film with a surface roughness that is∼ 1 …
temperature direct bonding creates an expunged film with a surface roughness that is∼ 1 …
Smooth thin film layers produced by low temperature hydrogen ion cut
RW Bower - US Patent 7,094,667, 2006 - Google Patents
A method for producing wafer splitting from ion implantation into silicon after low
temperature direct bonding with surface roughness that is 1 nm (RMS). This result is an …
temperature direct bonding with surface roughness that is 1 nm (RMS). This result is an …
Ion beams in materials processing and analysis
B Schmidt, K Wetzig - 2012 - books.google.com
A comprehensive review of ion beam application in modern materials research is provided,
including the basics of ion beam physics and technology. The physics of ion-solid …
including the basics of ion beam physics and technology. The physics of ion-solid …
Germanium surface wet-etch-reconditioning for porous lift-off and substrate reuse
Reducing both the cost and weight of Germanium (Ge)-based devices is a key concern in
extending these technologies to mainstream applications. In this framework, the porous Ge …
extending these technologies to mainstream applications. In this framework, the porous Ge …
Formation of size-controlled silicon nanocrystals in plasma enhanced chemical vapor deposition grown SiOxNy/SiO2 superlattices
Size controlled silicon nanocrystals (SiNC) in silicon oxynitride matrix were prepared using
plasma enhanced chemical vapor deposition. The as-deposited superlattices (SLs) and the …
plasma enhanced chemical vapor deposition. The as-deposited superlattices (SLs) and the …
Three dimensional device integration method and integrated device
PM Enquist, GG Fountain Jr - US Patent 9,431,368, 2016 - Google Patents
Int. C. HOIL 2L/20(2006.01) HOIL 2L/683(2006.01) HOIL 2L/768(2006.01) HOIL
2/822(2006.01) HOIL 23/13(2006.01) HOIL 23/36(2006.01) HOIL 23/248(2006.01) HOIL …
2/822(2006.01) HOIL 23/13(2006.01) HOIL 23/36(2006.01) HOIL 23/248(2006.01) HOIL …
Hydrogen blistering of silicon: Progress in fundamental understanding
B Terreault - Physica status solidi (a), 2007 - Wiley Online Library
When silicon is implanted with a sufficient concentration of H ions, at low to moderate
temperature, and subsequently annealed at high temperature, dome‐shaped gas‐filled …
temperature, and subsequently annealed at high temperature, dome‐shaped gas‐filled …