The embodiments of mechanisms for do** lightly doped drain (LDD) regions by driving
dopants from highly doped Source and drain regions by annealing for finFET devices are …

Embodiments of mechanisms for forming dislocations in source and drain regions of finFET
devices are provided. The mechanisms involve recessing fins and removing the dielec tric …

BACKGROUND The semiconductor integrated circuit (IC) industry has experienced rapid
growth. Over the course of this growth, functional density of the devices has generally …

Mechanisms for forming source/drain (S/D) regions of field effect transistors (FETs) are
provided. The mechanisms eliminate dislocations near gate corners and gate corner defects …

The present application claims priority to US Provisional Patent Application No. 61/780,520,
filed Mar. 13, 2013, and entitled “CVD Epitaxy Technique and Device', which appli cation is …

Embodiments of mechanisms for forming dislocations in source and drain regions of finFET
devices are provided. The mechanisms involve recessing fins and removing the dielectric …

The embodiments of processes and structures described above provide mechanisms for
improving mobility of carri ers. The dislocations in the source and drain regions and the …

5,908,313 A 6/1999 Chau et al. 6,137,149 A 10/2000 Kodama 6,204.233 B1 3/2001 Smith et
al. 6,232,641 B1 5/2001 Miyano et al. 6,238,989 B1 5/2001 Huang et al. 6,274,894 B1 8 …

BACKGROUND The semiconductor integrated circuit (IC) industry has experienced rapid
growth. Technological advances in IC materials and design have produced generations of …

The embodiments of processes and structures described pro vide mechanisms for improving
the mobility of carriers. A dislocation is formed in a source or drain region between gate …