Piezotronics and piezo-phototronics for adaptive electronics and optoelectronics

W Wu, ZL Wang - Nature Reviews Materials, 2016‏ - nature.com
Low-dimensional piezoelectric semiconductor nanomaterials, such as ZnO and GaN, have
superior mechanical properties and can be integrated into flexible devices that can be …

Elastic strain engineering for unprecedented materials properties

J Li, Z Shan, E Ma - Mrs Bulletin, 2014‏ - cambridge.org
“Smaller is stronger.” Nanostructured materials such as thin films, nanowires, nanoparticles,
bulk nanocomposites, and atomic sheets can withstand non-hydrostatic (eg, tensile or …

Tailoring the lasing modes in semiconductor nanowire cavities using intrinsic self-absorption

X Liu, Q Zhang, Q **ong, TC Sum - Nano letters, 2013‏ - ACS Publications
Understanding the optical gain and mode-selection mechanisms in semiconductor nanowire
(NW) lasers is key to the development of high-performance nanoscale oscillators, amplified …

Effect of tensile and compressive bending stress on electrical performance of flexible a-IGZO TFTs

MM Billah, MM Hasan, J Jang - IEEE Electron Device Letters, 2017‏ - ieeexplore.ieee.org
We report the changes in device performance of flexible amorphous indium-gallium-zinc-
oxide thin-film transistors (TFTs) by 1.65% tensile or compressive bending stress for 10 k …

Exciton and core-level electron confinement effects in transparent ZnO thin films

AA Mosquera, D Horwat, A Rashkovskiy, A Kovalev… - Scientific reports, 2013‏ - nature.com
The excitonic light emission of ZnO films have been investigated by means of
photoluminescence measurements in ultraviolet-visible region. Exciton confinement effects …

Strain related new sciences and devices in low-dimensional binary oxides

J Jiang, S Pendse, L Zhang, J Shi - Nano Energy, 2022‏ - Elsevier
The possibility of generating a large range of elastic strain in low-dimensional materials
offers a vast design space that has led to a plethora of scientific and technological …

Tailoring Exciton Dynamics by Elastic Strain‐Gradient in Semiconductors

X Fu, C Su, Q Fu, X Zhu, R Zhu, C Liu, Z Liao… - Advanced …, 2014‏ - Wiley Online Library
Precise modulation of electronic structures and electrodynamics at atomic scale is an
essential element for improving the physical and chemical properties of semiconductors in …

Exciton drift in semiconductors under uniform strain gradients: Application to bent ZnO microwires

X Fu, G Jacopin, M Shahmohammadi, R Liu… - ACS …, 2014‏ - ACS Publications
Optimizing the electronic structures and carrier dynamics in semiconductors at atomic scale
is an essential issue for innovative device applications. Besides the traditional chemical …

Strain-induced large exciton energy shifts in buckled CdS nanowires

L Sun, DH Kim, KH Oh, R Agarwal - Nano letters, 2013‏ - ACS Publications
Strain engineering can be utilized to tune the fundamental properties of semiconductor
materials for applications in advanced electronic and photonic devices. Recently, the effects …

High performance and stable flexible memory thin-film transistors using In–Ga–Zn–O channel and ZnO charge-trap layers on poly (ethylene naphthalate) substrate

SJ Kim, MJ Park, DJ Yun, WH Lee… - … on Electron Devices, 2016‏ - ieeexplore.ieee.org
A flexible charge-trap-type memory (f-CTM) thin-film transistor was proposed and fabricated
on poly (ethylene naphthalate)(PEN) substrate. All the fabrication process temperature was …