The aggressive technology and voltage scaling which modern digital circuits are facing
introduce a higher influence in metrics, as performance and power consumption, due to …

The scaling process of the conventional 2D‐planar metal‐oxide semiconductor field‐effect
transistor (MOSFET) is now approaching its limit as technology has reached below 20 nm …

In this paper, a high gain and low-power FinFET-based amplifier with independent gates is
proposed and its design and simulation are performed by HSPICE software and FinFET …

With the advance of computer systems, XORgates design became essential on arithmetic
circuits. Atnanometer nodes, despite the electrical characterization, de-signers must to …

The technology scaling and the adoption of FinFET devices brought several benefits, but
some drawbacks were also introduced at each technology node. This chapter starts by …

The FinFET based Full Adder in various cell designs is investigated in terms of performance
and energy efficiency. Additionally, the performance of the FinFET Full Adder in the …

The emergence of IoT alongside with the increased process variability impact in modern
technology nodes, is the main reason to control variability impact over metrics. Given the …

This paper investigates the most popular 1-bit CMOS full adder circuits to examine them for
robustness and consistency against adverse variations in process parameters using ultra …

The miniaturization of transistors at the Nanometric scale has caused adverse effects on the
performance of devices. Researchers have proposed new structures such as FinFET with …

Process variability mitigation and radiation hardness are relevant reliability requirements as
chip manufacturing advances more in-depth into the nanometer regime. The parameter yield …