Wide bandgap semiconductors promise devices with performances not achievable using
silicon technology. Among them, silicon carbide (SiC) is considered the top-notch material …

With the transition from planar to three-dimensional device architectures, devices such as
FinFETs, TFETs and nanowires etc. become omnipresent. This requires the dopant atom …

Atomic force microscopy (AFM) is a key tool for nanotechnology research and finds its
principal application in the determination of surface topography. However, the use of the …

For the first time local electrical characteristics of a blend of two semiconducting polymers
were studied with conductive atomic force microscopy (C-AFM). The investigated mixture is …

Two-dimensional (2D) carrier concentration profiling using scanning spreading resistance
microscopy (SSRM) has been carried out on molecular beam epitaxy-grown GaAs and InP …

The precise characterization of the do** profile is crucial for optimizing the performance
and structural integrity of semiconductor devices. As the size of semiconductor devices …

Semiconductor electronic and optoelectronic devices such as transistors, lasers, modulators,
and detectors are critical to the contemporary computing and communications infrastructure …

Scanning spreading resistance microscopy (SSRM) was performed on non-intentionally
doped (nid) ZnO nanowires (NWs) grown by metal-organic chemical vapor deposition in …

We directly image an InP p–n junction depletion region under both forward and reverse bias
using scanning voltage microscopy (SVM), a scanning probe microscopy (SPM) technique …

We report results of a scanning spreading resistance microscopy (SSRM) and scanning
capacitance microscopy (SCM) study of the distribution of charge carriers inside multi …