Recent advances in theoretical development of thermal atomic layer deposition: a review
Atomic layer deposition (ALD) is a vapor-phase deposition technique that has attracted
increasing attention from both experimentalists and theoreticians in the last few decades …
increasing attention from both experimentalists and theoreticians in the last few decades …
Understanding chemical and physical mechanisms in atomic layer deposition
Atomic layer deposition (ALD) is a powerful tool for achieving atomic level control in the
deposition of thin films. However, several physical and chemical phenomena can occur …
deposition of thin films. However, several physical and chemical phenomena can occur …
Modeling Mechanism and Growth Reactions for New Nanofabrication Processes by Atomic Layer Deposition.
Recent progress in the simulation of the chemistry of atomic layer deposition (ALD) is
presented for technologically important materials such as alumina, silica, and copper metal …
presented for technologically important materials such as alumina, silica, and copper metal …
Area Selective Atomic Layer Deposition for the Use on Active Implants: An Overview of Available Process Technology
Area‐selective atomic layer deposition (ASD) is a bottom‐up process that is of particular
importance in the semiconductor industry, as it prevents edge defects and avoids cost …
importance in the semiconductor industry, as it prevents edge defects and avoids cost …
Edge-Selective Growth of MCp2 (M = Fe, Co, and Ni) Precursors on Pt Nanoparticles in Atomic Layer Deposition: A Combined Theoretical and Experimental Study
Recent experiments about the selective coating of transition-metal oxide on Pt nanoparticles
have aroused great interest in molecular catalysis for the promotion of both activity and …
have aroused great interest in molecular catalysis for the promotion of both activity and …
Role of Temperature, Pressure, and Surface Oxygen Migration in the Initial Atomic Layer Deposition of HfO2 on Anatase TiO2(101)
The atomic layer deposition of HfO2 on a TiO2 (101) surface from tetrakis (dimethylamido)
hafnium and water is investigated using a combination of in situ vacuum X-ray photoelectron …
hafnium and water is investigated using a combination of in situ vacuum X-ray photoelectron …
Classification of processes for the atomic layer deposition of metals based on mechanistic information from density functional theory calculations
Reaction cycles for the atomic layer deposition (ALD) of metals are presented, based on the
incomplete data that exist about their chemical mechanisms, particularly from density …
incomplete data that exist about their chemical mechanisms, particularly from density …
Temperature controlled Ru and RuO2 growth via O* radical-enhanced atomic layer deposition with Ru (EtCp) 2
MG Kozodaev, YY Lebedinskii… - The Journal of …, 2019 - pubs.aip.org
This work demonstrates by in vacuo X-ray photoelectron spectroscopy and grazing-
incidence X-ray diffraction that Ru (EtCp) 2 and O* radical-enhanced atomic layer …
incidence X-ray diffraction that Ru (EtCp) 2 and O* radical-enhanced atomic layer …
Electrical Properties of ZrO2/Al2O3/ZrO2‐Based Capacitors with TiN, Ru, and TiN/Ru Top Electrode Materials
To improve the electrical properties of metal/insulator/metal capacitors for dynamic random
access memory, the effects of the top electrode materials and their structures on the …
access memory, the effects of the top electrode materials and their structures on the …
Nucleation of Co and Ru Precursors on Silicon with Different Surface Terminations: Impact on Nucleation Delay
Early transition metals ruthenium (Ru) and cobalt (Co) are of high interest as replacements
for Cu in next-generation interconnects. Plasma-enhanced atomic layer deposition (PE …
for Cu in next-generation interconnects. Plasma-enhanced atomic layer deposition (PE …