Memory devices and applications for in-memory computing
Traditional von Neumann computing systems involve separate processing and memory
units. However, data movement is costly in terms of time and energy and this problem is …
units. However, data movement is costly in terms of time and energy and this problem is …
Reliability of HfO2-Based Ferroelectric FETs: A Critical Review of Current and Future Challenges
Ferroelectric transistors (FeFETs) based on doped hafnium oxide (HfO2) have received
much attention due to their technological potential in terms of scalability, high-speed, and …
much attention due to their technological potential in terms of scalability, high-speed, and …
Tuning Polarity in WSe2/AlScN FeFETs via Contact Engineering
Recent advancements in ferroelectric field-effect transistors (FeFETs) using two-dimensional
(2D) semiconductor channels and ferroelectric Al0. 68Sc0. 32N (AlScN) allow high …
(2D) semiconductor channels and ferroelectric Al0. 68Sc0. 32N (AlScN) allow high …
FeCAM: A universal compact digital and analog content addressable memory using ferroelectric
Ferroelectric field effect transistors (FeFETs) are being actively investigated with the
potential for in-memory computing (IMC) over other nonvolatile memories (NVMs). Content …
potential for in-memory computing (IMC) over other nonvolatile memories (NVMs). Content …
Three-to-one analog signal modulation with a single back-bias-controlled reconfigurable transistor
Reconfigurable field effect transistors are an emerging class of electronic devices, which
exploit a structure with multiple independent gates to selectively adjust the charge carrier …
exploit a structure with multiple independent gates to selectively adjust the charge carrier …
An ultra-dense 2FeFET TCAM design based on a multi-domain FeFET model
Ternary content addressable memories (TCAMs) represent a form of logic-in-memory and
are currently widely used in routers, caches, and efficient machine learning models. From a …
are currently widely used in routers, caches, and efficient machine learning models. From a …
Programming memristor arrays with arbitrarily high precision for analog computing
In-memory computing represents an effective method for modeling complex physical
systems that are typically challenging for conventional computing architectures but has been …
systems that are typically challenging for conventional computing architectures but has been …
Ferroelectric FETs-based nonvolatile logic-in-memory circuits
Among the beyond-complementary metal-oxide-semiconductor (CMOS) devices being
explored, ferroelectric field-effect transistors (FeFETs) are considered as one of the most …
explored, ferroelectric field-effect transistors (FeFETs) are considered as one of the most …
Switching Dynamics of Ferroelectric Zr-Doped HfO2
Ferroelectric Zr-doped HfO 2 (HZO) is a promising candidate for steep slope transistors and
memory technology. For these applications, it is essential to understand and optimize the …
memory technology. For these applications, it is essential to understand and optimize the …
Design and analysis of an ultra-dense, low-leakage, and fast FeFET-based random access memory array
High static power associated with static random access memory (SRAM) represents a
bottleneck in increasing the amount of on-chip memory. Novel, emerging nonvolatile …
bottleneck in increasing the amount of on-chip memory. Novel, emerging nonvolatile …