▪ Abstract Highly strained semiconductors grow epitaxially on mismatched substrates in the
Stranski-Krastanow growth mode, wherein islands are formed after a few monolayers of …

The development of low-cost, compact, high-power and broadband superluminescent light-
emitting diodes is an important research subject for a wide range of applications. We …

Temperature invariant output slope efficiency and threshold current (T 0=∞) in the
temperature range of 5–75 C have been measured for 1.3 μm p-doped self-organized …

In this paper, we describe methods for analysis of edge-emitted amplified spontaneous
emission spectra measured as a function of the pumped stripe length. We show that both the …

Using the results of the phenomenological and microscopic description of magnetooptically
active transitions presented in the beginning of the article, a review is made of the progress …

A theoretical and experimental study of the optical gain, refractive index change, and
linewidth enhancement factor (LEF) of a p-doped quantum-dot (QD) laser is reported. These …

We have performed pump-probe differential transmission spectroscopy (DTS)
measurements on In/sub 0.4/Ga/sub 0.6/As-GaAs-AlGaAs heterostructures, which show that …

The device characteristics of semiconductor lasers have been improved with progress in
active layer structures. Carrier confinement dimension plays an important role especially in …

1.3 μ m tunnel injection quantum-dot lasers are demonstrated. The laser heterostructures
are grown by molecular-beam epitaxy. The InAs self-organized quantum dots are p doped to …

In the framework of the effective mass approximation, we have investigated the effects of
hydrostatic pressure, temperature, nonparabolicity of the band, and polaronic mass on …