How dissociated fragments of multiatomic molecules saturate all active surface sites—H2O adsorption on the Si (100) surface
CY Chang, CY Lin, DS Lin - Journal of Physics: Condensed …, 2021 - iopscience.iop.org
A fundamental question for the adsorption of any gas molecule on surfaces is its saturation
coverage, whose value can provide a comprehensive examination for the adsorption …
coverage, whose value can provide a comprehensive examination for the adsorption …
Atomic layer etching in HBr/He/Ar/O2 plasmas
Q Hao, MAI Elgarhy, P Kim, SK Nam… - Journal of Vacuum …, 2024 - pubs.aip.org
Atomic layer etching of Si is reported in a radio frequency (RF) pulsed-power inductively
coupled (ICP) plasma, with periodic injections of HBr into a continuous He/Ar carrier gas …
coupled (ICP) plasma, with periodic injections of HBr into a continuous He/Ar carrier gas …
Electron Attachment Leads to Unidirectional In-Plane Molecular Rotation of Para-Chlorostyrene on Si(100)
We report the observation of electron-induced unidirectional planar molecular rotation of
para-chlorostyrene on Si (100), studied by scanning tunneling microscopy (STM) at room …
para-chlorostyrene on Si (100), studied by scanning tunneling microscopy (STM) at room …